Patent classifications
H01L2224/9211
OPTOELECTRONIC SOLID STATE ARRAY
Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.
Electronic component mounting device
An electronic component mounting device (100) bonds a semiconductor die (150) to a substrate by thermocompression bonding, and seals, using an insulating resin, a gap between the semiconductor die (150) and the substrate. The electronic component mounting device is provided with: a film cutting mechanism (200) for cutting a long film (210) into cut pieces; and a mounting tool (110), which vacuum-sucks the semiconductor die (150), and bonds the die to the substrate by thermocompression bonding. Consequently, in the electronic component mounting device (100) that moves a mounting head in the horizontal direction, adhesion of the insulating resin to the mounting tool can be suppressed.
Electronic component mounting device
An electronic component mounting device (100) bonds a semiconductor die (150) to a substrate by thermocompression bonding, and seals, using an insulating resin, a gap between the semiconductor die (150) and the substrate. The electronic component mounting device is provided with: a film cutting mechanism (200) for cutting a long film (210) into cut pieces; and a mounting tool (110), which vacuum-sucks the semiconductor die (150), and bonds the die to the substrate by thermocompression bonding. Consequently, in the electronic component mounting device (100) that moves a mounting head in the horizontal direction, adhesion of the insulating resin to the mounting tool can be suppressed.
Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
UNDERFILL FILM FOR SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.
Electronic package, terminal and method for processing electronic package
A device comprising a connecting plate and a circuit element is disclosed. The circuit element is electrically coupled to the connecting plate through a solder connection including a plurality of solder balls disposed between the circuit element and the connecting plate. An underfill layer is formed between the circuit element and the connecting plate and configured to provide bonding between the circuit element and the connecting plate. The solder connection includes a first solder area with a first solder ball density and a second solder area with a second solder ball density. The first solder ball density is less than the second solder ball density. The underfill layer includes a bonding material continuously disposed in the second solder area of the solder connection.
Electronic package, terminal and method for processing electronic package
A device comprising a connecting plate and a circuit element is disclosed. The circuit element is electrically coupled to the connecting plate through a solder connection including a plurality of solder balls disposed between the circuit element and the connecting plate. An underfill layer is formed between the circuit element and the connecting plate and configured to provide bonding between the circuit element and the connecting plate. The solder connection includes a first solder area with a first solder ball density and a second solder area with a second solder ball density. The first solder ball density is less than the second solder ball density. The underfill layer includes a bonding material continuously disposed in the second solder area of the solder connection.
Method and structure for die bonding using energy beam
Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.
Method and structure for die bonding using energy beam
Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.