The present application discloses a semiconductor device with protection layers for reducing the metal to silicon leakage and a method for fabricating the semiconductor device. The semiconductor device includes a first die, a first conductive feature positioned in the first die, a second die positioned on the first die, a first mask layer positioned on the second die, a conductive filler layer positioned along the first mask layer and the second die, extending to the first die, and contacting the first conductive feature, isolation layers positioned between the conductive filler layer and the first die and between the conductive filler layer and the second die, and protection layers positioned between the conductive filler layer and the first mask layer and covering upper portions of the isolation layers.

The present application discloses a semiconductor device with protection layers for reducing the metal to silicon leakage and a method for fabricating the semiconductor device. The semiconductor device includes a first die, a first conductive feature positioned in the first die, a second die positioned on the first die, a first mask layer positioned on the second die, a conductive filler layer positioned along the first mask layer and the second die, extending to the first die, and contacting the first conductive feature, isolation layers positioned between the conductive filler layer and the first die and between the conductive filler layer and the second die, and protection layers positioned between the conductive filler layer and the first mask layer and covering upper portions of the isolation layers.

A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

Curable material layer is coated on surface of first die. First die includes first substrate and first contact pad. Second die is bonded to first die. Second die includes second substrate and second contact pad. Second contact pad is located on second substrate, at an active surface of second die. Bonding the second die to the first die includes disposing second die with the active surface closer to the curable material layer and curing the curable material layer. A through die hole is etched in the second substrate from a backside surface of the second substrate opposite to the active surface. The through die hole further extends through the cured material layer, is encircled by the second contact pad, and exposes the first contact pad. A conductive material is disposed in the through die hole. The conductive material electrically connects the first contact pad to the second contact pad.

Curable material layer is coated on surface of first die. First die includes first substrate and first contact pad. Second die is bonded to first die. Second die includes second substrate and second contact pad. Second contact pad is located on second substrate, at an active surface of second die. Bonding the second die to the first die includes disposing second die with the active surface closer to the curable material layer and curing the curable material layer. A through die hole is etched in the second substrate from a backside surface of the second substrate opposite to the active surface. The through die hole further extends through the cured material layer, is encircled by the second contact pad, and exposes the first contact pad. A conductive material is disposed in the through die hole. The conductive material electrically connects the first contact pad to the second contact pad.

Representative techniques and devices including process steps may be employed to form a common interconnection of a multi-die or multi-wafer stack. Each device of the stack includes a conductive pad disposed at a predetermined relative position on a surface of the device. The devices are stacked to vertically align the conductive pads. A through-silicon via is formed that electrically couples the conductive pads of each device of the stack.

Representative techniques and devices including process steps may be employed to form a common interconnection of a multi-die or multi-wafer stack. Each device of the stack includes a conductive pad disposed at a predetermined relative position on a surface of the device. The devices are stacked to vertically align the conductive pads. A through-silicon via is formed that electrically couples the conductive pads of each device of the stack.

A method includes placing a first plurality of dies over a carrier. The first plurality of dies include at least a first logic die and a first memory die, placing a second plurality of dies over the first plurality of dies. The second plurality of dies are electrically coupled to the first plurality of dies, and include at least a second logic die and a second memory die. A third plurality of dies are placed over the second plurality of dies, and are electrically coupled to the first plurality of dies and the second plurality of dies. The third plurality of dies include at least a third logic die and a third memory die. The method further includes forming electrical connectors over and electrically coupling to the first plurality of dies, the second plurality of dies, and the third plurality of dies.

A method includes placing a first plurality of dies over a carrier. The first plurality of dies include at least a first logic die and a first memory die, placing a second plurality of dies over the first plurality of dies. The second plurality of dies are electrically coupled to the first plurality of dies, and include at least a second logic die and a second memory die. A third plurality of dies are placed over the second plurality of dies, and are electrically coupled to the first plurality of dies and the second plurality of dies. The third plurality of dies include at least a third logic die and a third memory die. The method further includes forming electrical connectors over and electrically coupling to the first plurality of dies, the second plurality of dies, and the third plurality of dies.