A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

An anisotropic conductive film including an electrically insulating adhesive layer, and electrically conductive particles disposed on the electrically insulating adhesive layer. In such an anisotropic conductive film, the electrically conductive particles are disposed in a lattice by being arranged in first direction rows and second direction rows, and narrow and wide intervals are provided between neighboring rows in at least one of the direction rows. As a result, opposing terminals are stably connected using the anisotropic conductive film, inspection after the connecting is more easily performed, and the number of electrically conductive particles not involved in the connection are reduced and, thereby, the manufacturing cost of the anisotropic conductive film is reduced, even in FOG connections or the like with finer bump pitches.

An anisotropic conductive film including an electrically insulating adhesive layer, and electrically conductive particles disposed on the electrically insulating adhesive layer. In such an anisotropic conductive film, the electrically conductive particles are disposed in a lattice by being arranged in first direction rows and second direction rows, and narrow and wide intervals are provided between neighboring rows in at least one of the direction rows. As a result, opposing terminals are stably connected using the anisotropic conductive film, inspection after the connecting is more easily performed, and the number of electrically conductive particles not involved in the connection are reduced and, thereby, the manufacturing cost of the anisotropic conductive film is reduced, even in FOG connections or the like with finer bump pitches.

According to one embodiment, a semiconductor device includes a bed portion, a semiconductor element, and a connector. The semiconductor element has a first electrode electrically connected to the bed portion and a second electrode facing away from the bed portion. The connector includes a first connection portion with a first surface electrically connected to the second electrode. The first surface is inclined in a direction from an outer edge portion of the first surface toward a center of the first surface. A lead portion of the connector is electrically connected to the first connection portion and spaced away from the bed portion.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. The lower portion has a width is wider than of the upper portion.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.