A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate having an isolation ring extending in the direction substantially parallel to the surface of the substrate, an active region over the substrate and laterally enclosed by the isolation ring, a seal ring structure over the substrate, the seal ring structure laterally enclosing the active region and including at least a wiring layer and at least a via layer, and an encapsulant material laterally enclosing the seal ring structure.

A semiconductor device includes a semiconductor element, a sealing material, and an extension wire. The semiconductor element has, on a front surface, a first electrode pad and at least one second electrode pad, and generates a current in a direction connecting the front surface and a back surface. The sealing material is made of an insulating resin material and covers a part of the front surface and a side surface of the semiconductor element. The extension wire is disposed above the semiconductor element and inside the sealing material or on the sealing material. The extension wire is electrically connected to the second electrode pad, and extends from a position inside of a contour of the semiconductor element to a position outside of the contour of the semiconductor element.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

An integrated circuit includes a first die and a second die. The second die is embedded or otherwise contained in a layered interconnect structure of the first die. The second die can be an IC die or it can be an electrically inactive element, such as a heat spreader. A portion of the layered interconnect structure is laterally adjacent to the second die. A first part of the second die can be electrically connected to a second part of the second die via the interconnect structure of the first die. The second die can be operatively coupled to the first die using electrical connections between the second die and one or more interconnect layers above or below the second die, or to devices of the first die. A method of fabricating an interconnect structure with one or more embedded dies is also disclosed.

An integrated circuit includes a first die and a second die. The second die is embedded or otherwise contained in a layered interconnect structure of the first die. The second die can be an IC die or it can be an electrically inactive element, such as a heat spreader. A portion of the layered interconnect structure is laterally adjacent to the second die. A first part of the second die can be electrically connected to a second part of the second die via the interconnect structure of the first die. The second die can be operatively coupled to the first die using electrical connections between the second die and one or more interconnect layers above or below the second die, or to devices of the first die. A method of fabricating an interconnect structure with one or more embedded dies is also disclosed.

A semiconductor device of the disclosure includes a peripheral circuit structure including a peripheral transistor, a semiconductor layer on the peripheral circuit structure, a source structure on the semiconductor layer, a gate stack structure disposed on the source structure and including insulating patterns and conductive patterns alternately stacked, a memory channel structure electrically connected to the source structure and penetrating the gate stack structure, a support structure penetrating the gate stack structure and the source structure, and an insulating layer covering the gate stack structure, the memory channel structure and the support structure. The support structure includes an outer support layer contacting side walls of the insulating patterns and side walls of the conductive patterns, and a support pattern and an inner support layer contacting an inner side wall of the outer support layer.

A semiconductor device of the disclosure includes a peripheral circuit structure including a peripheral transistor, a semiconductor layer on the peripheral circuit structure, a source structure on the semiconductor layer, a gate stack structure disposed on the source structure and including insulating patterns and conductive patterns alternately stacked, a memory channel structure electrically connected to the source structure and penetrating the gate stack structure, a support structure penetrating the gate stack structure and the source structure, and an insulating layer covering the gate stack structure, the memory channel structure and the support structure. The support structure includes an outer support layer contacting side walls of the insulating patterns and side walls of the conductive patterns, and a support pattern and an inner support layer contacting an inner side wall of the outer support layer.