An electronic device is provided, the electronic device includes a driving substrate (13), the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, and a plurality of disc-shaped electronic components, at least one disc-shaped electronic component is disposed in at least one circular groove, an alignment element positioned on a top surface of the at least one disc-shaped electronic component, a diameter of the at least one disc-shaped electronic component is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the disc-shaped electronic component and the rectangular groove satisfy the condition of (R+r)/2>(w.sup.2+H.sup.2).sup.1/2.

A semiconductor device transfer structure, a display apparatus, and a method of manufacturing the display apparatus are provided. The semiconductor device transfer structure includes: a substrate; an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device; and a transfer layer provided on the alignment layer and including a groove.

A device transfer substrate includes a plurality of recesses, wherein each of the plurality of recesses includes a first region having a shape of a first figure, a second region having a shape of a second figure, and an overlapping region formed as a portion of the first region partially overlaps a portion of the second region, wherein a maximum width of the overlapping region in a direction intersecting with a straight line passing through a center of the first figure and a center of the second figure is less than a diameter or a diagonal length of the first figure and less than a diameter or a diagonal length of the second figure.

According to a semiconductor light-emitting element collecting apparatus and a semiconductor light-emitting element collecting method using the same according to an embodiment of the present invention, in order to collect semiconductor light-emitting elements, a fluid accommodated in a housing unit is rotated such that semiconductor light-emitting elements are guided to sink to a bottom surface of the housing unit, and accordingly, the semiconductor light-emitting elements can be rapidly collected. In addition, a collecting operation can be performed without exerting the physical force to the semiconductor light-emitting elements, a collecting rate of the semiconductor light-emitting elements can be improved.

Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate.

A method of forming a charge pattern on a microchip includes depositing a first material on an insulator surface of the microchip, depositing a material having capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilanem, and patterning the self-assembled monolayer to reveal a portion of the first material. A method of forming a charge pattern in a microchip includes depositing a first material as one of either a solution processed material or a vapor deposited material to generate a first polarity or first magnitude of charge, depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge, and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

Embodiments are related to fluidic assembly and, more particularly, to systems and methods for forming physical structures on a substrate.

Provided is a ultra-small light-emitting diode (LED) electrode assembly including a base substrate; an electrode line formed on the base substrate, and including a first electrode and a second electrode formed in a line shape to be interdigitated with each other while being spaced apart from each other; and at least one ultra-small LED device connected to the electrode line. A cross section of at least one of the first and second electrodes in a vertical direction has a height variation such that the first and second electrodes easily come in contact with the at least one ultra-small LED device.

A representative system and method for manufacturing stacked semiconductor devices includes disposing an aqueous alkaline solution between a first semiconductor device and a second semiconductor device prior to bonding. In a representative implementation, first and second semiconductor devices may be hybrid bonded to one another, where dielectric features of the first semiconductor device are bonded to dielectric features of the second semiconductor device, and metal features of the first semiconductor device are bonded to metal features of the second semiconductor device. Immersion bonds so formed demonstrate a substantially lower incidence of delamination associated with bond defects.

Discussed are a device for self-assembling semiconductor light-emitting diodes, in which the device includes an assembly chamber having a space for accommodating a fluid; a magnetic field forming part having at least one magnet for applying a magnetic force to the semiconductor light-emitting diodes dispersed in the fluid and a moving part for changing positions of the at least one magnet so that the semiconductor light-emitting diodes move in the fluid; and a substrate chuck having a substrate support part configured to support a substrate, and a vertical moving part for lowering the substrate so that one surface of the substrate is in contact with the fluid in a state in which the substrate is supported by the substrate support part, wherein the vertical moving part provided at the substrate chuck lowers the substrate on to the fluid so that a force of buoyancy by the fluid is applied to the substrate.