A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

A pick-up device has a caves. A first magnetic force is capable of attracting micro-devices to move toward the caves of the pick-up device. The pick-up device is disposed on a pick-up roller, and the pick-up roller drives the caves of the pick-up device to move relative to the micro-devices. Given that the first magnetic force is provided, the pick-up device compresses the micro-devices, so that the micro-devices are fitted in place the micro-devices into the caves of the pick-up device, wherein a shape of the caves is the same as a shape of the micro-devices. The micro-devices are transferred from the caves of the pick-up device to a receiving device.

Discussed is an apparatus for self-assembling semiconductor light-emitting devices, the apparatus including a fluid chamber to accommodate the semiconductor light-emitting devices, each semiconductor light-emitting device having a magnetic body; a magnet to apply a magnetic force to the semiconductor light-emitting devices while an assembly substrate is disposed at an assembly position of the self-assembly apparatus; a power supply to induce formation of an electric field on the assembly substrate to allow the semiconductor light-emitting devices to be seated at a preset positions on the assembly substrate in a process of moving the semiconductor light-emitting devices due to a change in a position of the magnet; and a fluid injector to shoot a fluid to some of the semiconductor light-emitting devices to allow the some of the semiconductor light-emitting devices seated on the assembly substrate to be separated from the assembly substrate.

Discussed is a semiconductor light-emitting device that can include a first conductive electrode, a first conductive semiconductor layer having one surface on the first conductive electrode, and another surface on an undoped semiconductor layer, an active layer on the one surface of the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a second conductive electrode on the second conductive semiconductor layer, and a light-transmitting layer on a surface of the undoped semiconductor layer that is opposite to where the first conductive semiconductor layer is disposed with respect to the undoped semiconductor layer. The light-transmitting layer can include a material having electrical conductivity.

In one aspect the present disclosure relates to a 3D printed signal control backbone apparatus. The apparatus may have a filament including a first material section and a plurality of second material sections. The first material section is bounded on opposing ends by the second material sections. The first material section is formed by an ink having a percolating network of a plurality of chiplets infused in a non-conductive polymer. The plurality of chiplets form electrically responsive elements imparting a predetermined logic function and which are responsive to a predetermined electrical signal. The second material sections are formed by an ink which is electrically conductive.

In one aspect the present disclosure relates to a 3D printed signal control backbone apparatus. The apparatus may have a filament including a first material section and a plurality of second material sections. The first material section is bounded on opposing ends by the second material sections. The first material section is formed by an ink having a percolating network of a plurality of chiplets infused in a non-conductive polymer. The plurality of chiplets form electrically responsive elements imparting a predetermined logic function and which are responsive to a predetermined electrical signal. The second material sections are formed by an ink which is electrically conductive.

A semiconductor light emitting diode self-assembling device according to the present invention comprises: an assembly chamber in which fluid and semiconductor light emitting diodes are received; a magnetic chuck disposed above the assembly chamber and applying, while moving in a horizontal direction, a magnetic force thereto so as to induce movement of the semiconductor light emitting diodes in the assembly chamber; a substrate chuck for placing an assembly substrate, on which the semiconductor light emitting diodes in the assembly chamber are seated, between the assembly chamber and the magnetic chuck and supporting the assembly substrate; and a control part for controlling the driving of the magnetic chuck and the substrate chuck, wherein the magnetic chuck includes: a magnetic force forming part including a plurality of magnets; and a vacuum forming part for correcting a bending phenomenon of the assembly substrate by using vacuum pressure between the plurality of magnets so as to maintain a predetermined interval between one side of the magnetic chuck and the assembly substrate.

A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

A micro light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer arranged on an upper surface of the first semiconductor layer, a second semiconductor layer arranged on an upper surface of the light emitting layer and doped with a second conductivity type electrically opposite to the first conductivity type, an insulating layer arranged on an upper surface of the second semiconductor layer, a first electrode arranged on an upper surface of the insulating layer and electrically connected to the first semiconductor layer, a second electrode arranged on the upper surface of the insulating layer and electrically connected to the second semiconductor layer, and an aluminum nitride layer arranged on a lower surface of the first semiconductor layer and having a flat surface.

Provided is a display device including a substrate including a display area including a plurality of pixel areas, and a non-display area outside the display area, a pixel circuit layer including a plurality of circuit elements in the display area, a display element layer including a plurality of light-emitting elements in the display area on the pixel circuit layer, and first and second alignment lines on the substrate, and each including a main line at the same layer as at least one electrode on the display element layer, and a sub line electrically connected to the main line and at the same layer as at least one electrode on the pixel circuit layer, wherein the first alignment line and the second alignment line do not include the main line in the non-display area, and include the sub line to be spaced apart from one edge of the substrate.