Provided is a ultra-small light-emitting diode (LED) electrode assembly including a base substrate; an electrode line formed on the base substrate, and including a first electrode and a second electrode formed in a line shape to be interdigitated with each other while being spaced apart from each other; and at least one ultra-small LED device connected to the electrode line. A cross section of at least one of the first and second electrodes in a vertical direction has a height variation such that the first and second electrodes easily come in contact with the at least one ultra-small LED device.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.

A pixel includes an emission area and a non-emission area; first to fourth alignment electrodes spaced apart from each other in the emission area and an area of the non-emission area; an insulating layer disposed on the first to fourth alignment electrodes; first to fourth bridge patterns disposed on the insulating layer in the non-emission area; a bank disposed on the first to fourth bridge patterns in the non-emission area, and including a first opening and a second opening; first and second pixel electrodes disposed in the emission area; and light emitting elements disposed in the emission area, and electrically connected with the first and second pixel electrodes. The first alignment electrode, the first bridge pattern, and the first pixel electrode are electrically connected to each other. The third alignment electrode, the third bridge pattern, and the second pixel electrode are electrically connected to each other.

The present invention relates to a method for manufacturing a display device, and more particularly, to a method for manufacturing a display device using a semiconductor light emitting device having a size of several μm to several tens of μm, and to an assembly substrate used for manufacturing the display device. The present invention provides a display device, characterized in that including a substrate having a wiring electrode, a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, and a passivation layer formed to cover the semiconductor light emitting device, and the passivation layer is formed to cover only a portion of a side surface of the semiconductor light emitting device.

A removal module for removing a mis-assembled semiconductor light emitting diode includes a housing having an inner space formed by an upper plate having a nozzle hole and a lower plate spaced apart from the upper plate; a fluid supply part configured to supply a fluid outside the housing to the inner space; and a fluid control part configured to control spray of the fluid supplied to the inner space through the nozzle hole by adjusting a pressure of the inner space.

Provided is a micro-element recycling method and system. The method includes: collecting at least one micro-element failing in transfer; applying a first acting force to the micro-element in a first direction, and applying a second acting force to the micro-element in a second direction; moving the micro-element from an initial position to a target position by means of the combined action of the first acting force and the second acting force; and recycling the micro-element located at the target position.

A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

A guide apparatus configured to transfer light-emitting devices in a liquid onto a substrate is provided. The guide apparatus includes a base configured to support the substrate; and a guide member configured to couple with the base to be seated on a mounting surface of the substrate in a state in which the substrate is supported on a surface of the base, wherein the guide member includes guide holes configured to respectively guide the light-emitting devices in the liquid to be disposed on the mounting surface of the substrate.

The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.

A method for manufacturing a display device related to a micro-light-emitting diode (micro-LED) according to an embodiment of the present disclosure comprises the steps of: moving an assembly device comprising a magnetic body, while the assembly device is in contact or not in contact with an assembly substrate (a chamber filled with fluid is positioned below the assembly device and the assembly substrate, wherein a plurality of specific semiconductor light-emitting diodes are included in the chamber); on the basis of a magnetic field generated by the assembly device, moving the plurality of specific semiconductor light-emitting diodes in the chamber in a direction in which the assembly substrate is positioned; arranging, in first-type assembly grooves in the assembly substrate, a first group of semiconductor light-emitting diodes from among the plurality of specific semiconductor light-emitting diodes; and arranging, in second-type assembly grooves in the assembly substrate, a second group of semiconductor light-emitting diodes from among the plurality of specific semiconductor light-emitting diodes.