A fan-out packaging structure includes a redistribution layer and a positioning sheet formed on the redistribution layer. The positioning sheet defines at least one opening penetrating opposite sides of the positioning sheet. At least one chip is mounted in the at least one opening. The redistribution layer comprises at least one conductive circuit. The at least one chip is electrically coupled to a corresponding one conductive circuit.

A transferring method includes providing an adsorption device, using the adsorption device to attract and hold a plurality of light emitting diodes (LEDs), providing a target substrate with a plurality of spots of anisotropic conductive adhesive on a surface of the target substrate; moving the adsorption device or the target substrate wherein each of the plurality of LEDs adsorbed by the adsorption device becomes in contact with one of the plurality of spots of anisotropic conductive adhesive; and curing the plurality of spots of anisotropic conductive adhesive on the target substrate and moving away the adsorption device.

An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, a plurality of disc-shaped light-emitting units, at least one disc-shaped light-emitting unit is disposed in at least one circular groove, and the at least one disc-shaped light-emitting unit includes an alignment element positioned on a top surface of the at least one disc-shaped light-emitting unit, a diameter of the at least one disc-shaped light-emitting unit is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the at least one disc-shaped light-emitting unit and the at least one rectangular groove satisfy the condition of (R+r)/2>(w.sup.2+H.sup.2).sup.1/2.

A method and apparatus for light induced selective transfer of components. A donor substrate (10) with a plurality of components (11,12) divided in different subsets arranged according to respective layouts (A,B). A target substrate (20) comprises recesses (21) and protrusions (25). The donor and target substrates (10,20) are aligned such that a first subset of components (11) is suspended over corresponding recesses (21) in the target substrate (20) and a second subset of components (12) is in contact with corresponding protrusions (25) of the target substrate (20). Light (L) is projected onto the donor substrate (10) to transfer the first subset of components (11) across and into the corresponding recesses (21) while the second subset of components (12) remains attached to the donor substrate (10).

Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.

A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 μm to 30 μm.

A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.

Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.

An adsorption device includes a magnetic plate and a limiting layer. A surface of the magnetic plate includes a first region and a plurality of second regions spaced apart from each other. The first region and each second region do not overlap with each other. The first region forms a magnetic pole of the magnetic plate, and each second region forms the opposite magnetic pole of the magnetic plate. The limiting layer covers the first region. Each second region is exposed to the limiting layer and configured for adsorbing a small-scale LED as a target object.

The present invention provides a chip carrier structure including: a non-circuit substrate, a plurality of micro heaters, and an adhesive layer. The micro heaters are disposed on the non-circuit substrate. The adhesive layer is disposed on the micro heaters, and a plurality of chips are disposed on the adhesive layer. Thereby, the present invention improves the solder yield of the process by a wafer carrying structure and a wafer carrying device.