An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.

A fan-out packaging structure includes a redistribution layer and a positioning sheet formed on the redistribution layer. The positioning sheet defines at least one opening penetrating opposite sides of the positioning sheet. At least one chip is mounted in the at least one opening. The redistribution layer comprises at least one conductive circuit. The at least one chip is electrically coupled to a corresponding one conductive circuit.

Light emitting devices and methods for their manufacture are provided. According to one aspect, a light emitting device is provided that comprises a substrate having a recess, and an interlayer dielectric layer located on the substrate. The interlayer dielectric layer may have a first hole and a second hole, the first hole opening over the recess of the substrate. The light emitting device may further include first and second micro LEDs, the first micro LED having a thickness greater than the second micro LED. The first micro LED and the second micro LED may be placed in the first hole and the second hole, respectively.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. The lower portion has a width is wider than of the upper portion.

In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device. A patterned release layer and, optionally, a capping layer are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate with a bonding layer. The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.

Disclosed are a display device and a method of manufacturing a display device. The method of a display device according to an exemplary embodiment of the present disclosure includes: a first transferring step of transferring a plurality of LEDs disposed on a wafer onto a plurality of donors; and a second transferring step of transferring the plurality of LEDs transferred onto the plurality of donors onto a display panel, in which in the second transferring step, an area where one of the plurality of donors overlaps the display panel partially overlaps an area where the other one of the plurality of donors overlaps the display panel. Therefore, the plurality of LEDs having different wavelengths is uniformly transferred to reduce a boundary caused by the difference in wavelengths and improve color uniformity.

Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.

A device for the transfer of chips from a source substrate onto a destination substrate, including: a source substrate having a lower surface and an upper surface; and a plurality of elementary chips arranged on the upper surface of the source substrate, wherein each elementary chip is suspended above the source substrate by at least one breakable mechanical fastener, said at least one breakable mechanical fastener having a lower surface fastened to the upper surface of the source substrate and an upper surface fastened to the lower surface of the chip.

A Micro LED display panel, a method for fabricating the Micro LED display panel and a display device are provided. When the LED chip array is transferred, it may only be required to embed the LED chip array into the adhesive film layer. The LED chip array is bonded to the array substrate through the adhesive film layer. Then, unnecessary portions of the adhesive film layer and unnecessary LED chips are removed. It is not necessary to attach LED chips in the LED chip array one by one to the substrate by soldering, in which case the process of fabricating the Micro LED display panel is simplified, the difficulty in fabricating the Micro LED display panel is reduced, the influence of the high temperature generated by the soldering process on the LED chips is avoided, and damage to the LED chips during the transfer process is avoided.