A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

A semiconductor package including a first redistribution structure including a first redistribution layer disposed therein, a first semiconductor chip disposed on the first redistribution structure, an insulating layer surrounding a sidewall of the first semiconductor chip, the insulating layer spaced apart from the first semiconductor chip in a horizontal direction, a first connection structure extending through the insulating layer in a vertical direction, connected to the first redistribution structure, and includes a first via disposed inside the insulating layer. A second connection structure disposed between the first semiconductor chip and the first connection structure, extends through the insulating layer in the vertical direction, connected to the first redistribution structure, and includes a second via disposed inside the insulating layer. A molding layer covering the first semiconductor chip, a sidewall and an upper surface of the insulating layer. At least a portion of the molding layer disposed between the first and second vias.

A semiconductor package includes: a lower substrate including a lower wiring layer; an upper substrate disposed on the lower substrate and including an upper wiring layer and a cavity; an adhesive layer disposed in the cavity; a semiconductor chip having a first surface and a second surface opposite to the first surface, wherein connection pads are disposed on the first surface of the semiconductor chip and are electrically connected to the lower wiring layer, and wherein the second surface of the semiconductor chip is attached to the adhesive layer; a connection structure disposed between the lower substrate and the upper substrate and electrically connecting the lower wiring layer and the upper wiring layer; an encapsulant at least partially surrounding at least a portion of each of the semiconductor chip and the connection structure; and connection bumps electrically connected to the lower wiring layer.

A semiconductor package includes; a lower semiconductor chip mounted on a lower package substrate, an interposer on the lower package substrate and including an opening, connection terminals spaced apart from and at least partially surrounding the lower semiconductor chip and extending between the lower package substrate and the interposer, a first molding member including a first material and covering at least a portion of a top surface of the lower semiconductor chip and at least portions of edge surfaces of the lower semiconductor chip, wherein the first molding member includes a protrusion that extends upward from the opening to cover at least portions of a top surface of the interposer proximate to the opening, and a second molding member including a second material, at least partially surrounding the first molding member, and covering side surfaces of the first molding member and the connection terminals, wherein the first material has thermal conductivity greater than the second material.

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

The embodiment of the present disclosure discloses a method of packaging a chip and a chip package structure. the method of packaging the chip includes: mounting at least one chip to be packaged and at least one electrically conductive module on a carrier, wherein the at least one chip to be packaged has a back surface facing upwards and an active surface facing towards the carrier, and the at least one electrically conductive module is in the vicinity of the at least one chip to be packaged; forming a first encapsulation layer, wherein the first encapsulation layer covers the entire carrier for encapsulating the at least one chip to be packaged and the at least one electrically conductive module; detaching the carrier to expose the active surface of the at least one chip to be packaged and a first surface of the at least one electrically conductive module; and completing the packaging by a rewiring process on the active surface of the at least one chip to be packaged and the first surface of the at least one electrically conductive module. The present disclosure reduces the difficulty of packaging a chip by mounting the active surface of a chip to be packaged and an electrically conductive module on a carrier and thus saves the cost of packaging.

A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

A base carries a first chip and a second chip oriented differently with respect to the base and packaged in a package. Each chip integrates an antenna and a magnetic via. A magnetic coupling path connects the chips, forming a magnetic circuit that enables transfer of signals and power between the chips even if the magnetic path is interrupted, and is formed by a first stretch coupled between the first magnetic-coupling element of the first chip and the first magnetic-coupling element of the second chip, and a second stretch coupled between the second magnetic-coupling element of the first chip and the second magnetic-coupling element of the second chip. The first stretch has a parallel portion extending parallel to the faces of the base. The first and second stretches have respective transverse portions extending on the main surfaces of the second chip, transverse to the parallel portion.