A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.

A package and a method forming the same are provided. The package includes an integrated circuit die. A sidewall of the integrated circuit die has a first facet and a second facet. The first facet and the second facet have different slopes. The package includes an encapsulant surrounding the integrated circuit die and in physical contact with the first facet and the second facet and an insulating layer over the integrated circuit die and the encapsulant. An upper surface of the integrated circuit die is lower than an upper surface of the encapsulant. A sidewall of the insulating layer is substantially coplanar with the first facet.

To provide a method of manufacturing an element chip in which creep-up of a conductive material can be suppressed in a mounting step. In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate which has a plurality of element regions and of which an element surface is covered by an insulating film, the substrate is divided into the element chips by exposing the substrate to a first plasma, the element chips having a first surface, a second surface, and a side surface are held spaced from each other on a carrier, and the side surface and the insulating film are in a state of being exposed.

Implementations of a semiconductor package may include a semiconductor die including a first side and a second side, the first side of the semiconductor die including one or more electrical contacts; and an organic material covering at least the first side of the semiconductor die. Implementations may include where the one or more electrical contacts extend through one or more openings in the organic material; a metal-containing layer coupled to the one or more electrical contacts; and one or more slugs coupled to one of a first side of the semiconductor die, a second side of the semiconductor die, or both the first side of the semiconductor die and the second side of the semiconductor die.

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

A display device made of a TFT substrate and a driver IC is configured to eliminate bad connection between them. On the driver IC connected to the TFT substrate, a first principal surface has first bumps formed along a first side having a first edge and second bumps formed along a second side opposite to the first side and having a second edge. The TFT substrate has first terminals and second terminals connected to the first and the second bumps, respectively. On a cross section taken perpendicularly to the first and the second sides, the first principal surface has a first area between the first and the second bumps and a second area between the second bumps and the second edge. The first and the second areas are bent toward the TFT substrate.

A semiconductor device assembly can include a substrate including a plurality of external connections. The assembly can include a first individual module and a first bond pad. The first individual module can be disposed on the substrate such that the first side of the first individual module faces the substrate. In some embodiments, the first individual module electrically is coupled to an external connection of the substrate via the first bond pad. The assembly can include a second individual module comprising a plurality of lateral sides. The second individual module can be disposed over the first individual module. In some embodiments, a first lateral side of the second individual module includes a first step forming a first overhang portion and a first recess. In some embodiments, the first bond pad is vertically aligned with the first recess of the second individual module.