A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

The purpose of the present invention is to provide an electronic circuit connection method and an electronic circuit capable of improving the reliability of electrical connection.

A connection method for an electronic circuit 100 includes: a process of forming a first metal bumps 30 and a second metal bump 40, each of which has a cone shape; and a process of joining a first electrode pad 12 and a third electrode pad 22 by the first metal bump 30 and joining a second electrode pad 13 and a fourth electrode pad 23 by the second metal bump 40, wherein at least one region of between a first region 11a and a second region 11b in a first connection surface 11 and between a third region 21a and a fourth region 21b in a second connection surface 21 has a step 11c, and the first metal bump 30 and the second metal bump 40 have different heights so as to correct a height H1 of the step 11c.

Techniques are disclosed for forming a frame on the backplane comprising structures at least partially circumscribing or enclosing metal contacts on the backplane. In some embodiments, the frame may comprise a photoresist. The dimensions and structural integrity of the frame can help prevent misalignment and/or damage of physical obtrusions of light-emitting structures during a bonding process of the light-emitting structures to the backplane.

A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a redistribution layer (RDL) having a conductive layer in a first dielectric layer, and a second dielectric layer over the conductive and first dielectric layers. The RDL comprises an extended portion having a first thickness that vertically extends from a bottom surface of the first dielectric layer to a topmost surface of the second dielectric layer. The electronic package comprises a die on the RDL, where the die has sidewall surfaces, a top surface, and a bottom surface that is opposite from the top surface, and an active region on the bottom surface of the die. The first thickness is greater than a second thickness of the RDL that vertically extends from the bottom surface of the first dielectric layer to the bottom surface of the die. The extended portion is over and around the sidewall surfaces.

A display device comprising: a first substrate; a plurality of pixels provided to the first substrate; a light emitting element provided to each of the pixels; a phosphor layer covering at least an upper surface of the light emitting element; a first reflective layer facing a side surface of the light emitting element; and a second reflective layer provided to a side surface of the phosphor layer, separated from the first reflective layer in a normal direction of the first substrate, and disposed farther away from the first substrate than the first reflective layer.