A semiconductor package includes a package substrate, a first semiconductor chip and a second semiconductor chip sequentially stacked on the package substrate, the first semiconductor chip and the second semiconductor chip being disposed in a form of an offset stack structure, and the second semiconductor chip including an overhang further protruding beyond a side surface of the first semiconductor chip in a first horizontal direction, an adhesive member disposed on a lower surface of the second semiconductor chip, the adhesive member including an extension extending to a lower level than an upper surface of the first semiconductor chip. The extension contacts the side surface of the first semiconductor chip, and overlaps with at least a portion of the overhang in a vertical direction.

A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less.

A method of making a micro-module structure comprises providing a substrate, the substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post, the component having a component top side and a component bottom side opposite the component top side, the component bottom side disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.

An integrated circuit includes a first die and a second die. The second die is embedded or otherwise contained in a layered interconnect structure of the first die. The second die can be an IC die or it can be an electrically inactive element, such as a heat spreader. A portion of the layered interconnect structure is laterally adjacent to the second die. A first part of the second die can be electrically connected to a second part of the second die via the interconnect structure of the first die. The second die can be operatively coupled to the first die using electrical connections between the second die and one or more interconnect layers above or below the second die, or to devices of the first die. A method of fabricating an interconnect structure with one or more embedded dies is also disclosed.

A semiconductor package includes a circuit board including a wiring structure, first and second semiconductor chips disposed on the circuit board and connected to the wiring structure, a dummy chip disposed on the circuit board and positioned between the first and second semiconductor chips, and a molded member disposed on the circuit board and surrounding the first and second semiconductor chips and the dummy chip. The dummy chip may include a rounded edge between an upper surface and a side surface.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, an interposer on the lower semiconductor chip, the interposer including a plurality of pieces spaced apart from each other, an upper semiconductor chip on the interposer, and a molding member covering the lower semiconductor chip and the interposer.

A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.

A semiconductor device includes a first semiconductor chip in which a first multilayer wiring structure including a first coil and a second coil is formed and a second semiconductor chip in which a second multilayer wiring structure including a third coil and a fourth coil is formed. The second semiconductor chip is joined to the first semiconductor chip such that the first coil (second coil) and the third coil (fourth coil) are overlapped and the second semiconductor chip does not have an offset structure with respect to the first semiconductor chip. The second semiconductor chip is joined to the first semiconductor chip such that it is not overlapped with a pad for the first semiconductor chip and a pad for the second semiconductor chip.