A high-frequency circuit includes: a first substrate; a transmission line formed on the first substrate and having first and second output portions branched from an input portion; a second substrate; first and second pads formed on the second substrate; a first wire connecting the first output portion to the first pad; and a second wire connecting the second output portion to the second pad, wherein an electrical length from the input portion to an edge of the second output portion is longer than an electrical length from the input portion to an edge of the first output portion, and a length from a junction between the second wire and the second output portion to the edge of the second output portion is longer than a length from a junction between the first wire and the first output portion to the edge of the first output portion.

Provided is a light-emitting diode (LED) module, LED panel and LED screen. The LED module includes a composite layer, at least one LED chipset with an LED chip, at least one driver integrated circuit (IC); the composite layer includes a substrate arranged at the front side; the LED chip and the driver IC are installed at the front side of the composite layer, the cathode of the LED chip is connected to the driver IC by golden wire bonding; blind holes are arranged at the front side of the composite layer, the anode of the LED chip is connected to the positive electrode inside the composite layer through one of the blind holes; the wire coming from the VDD pin of the driver IC is connected to the positive electrode inside the composite layer through at least one of the blind holes; the wire coming from the GND pin of the driver IC is connected to the negative electrode inside the composite layer through one of the blind holes; the at least one driver IC is connected with each other through a signal line.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

A semiconductor chip is mounted on a first surface of an interconnect substrate, and has a multilayer interconnect layer. A first inductor is formed over the multilayer interconnect layer, and a wiring axis direction thereof is directed in a horizontal direction to the interconnect substrate. A second inductor is formed on the multilayer interconnect layer, and a wiring axis direction thereof is directed in the horizontal direction to the interconnect substrate. The second inductor is opposite to the first inductor. A sealing resin seals at least the first surface of the interconnect substrate and the semiconductor chip. A groove is formed over the whole area of a portion that is positioned between the at least first inductor and the second inductor of a boundary surface of the multilayer interconnect layer and the sealing resin.

A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

An integrated circuit package including integrated circuit dies and a method of forming are provided. The integrated circuit package may include a first integrated circuit die and a second integrated circuit die bonded to the first integrated circuit die. The first integrated circuit die may include a first substrate, a first interconnect structure, and a first bonding layer. The first interconnect structure may be between the first bonding layer and the first substrate. The second integrated circuit die may include a second substrate, a second interconnect structure, and a second bonding layer. The second interconnect structure may be between the second bonding layer and the second substrate. A first surface of the first bonding layer may be in direct contact with a first surface of the second bonding layer. A sidewall the first bonding layer and the first surface of the second bonding layer may form a first acute angle.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

Embodiments of the disclosure provide an interconnect structure including: a first die having a first surface and an opposing second surface, and a groove within first surface of the first die; an adhesive dielectric layer mounted to the opposing second surface of the first die; a second die having a first surface mounted to the adhesive dielectric layer, and an opposing second surface, wherein the adhesive dielectric layer is positioned directly between the first and second dies; and a through-semiconductor via (TSV) including a first TSV metal extending from the first surface of the first die to the adhesive dielectric layer, and a second TSV metal substantially aligned with the first TSV metal and extending from the adhesive dielectric layer to the opposing second surface of the second die, wherein the TSV includes a metal-to-metal bonding interface between the first and second TSV metals within the adhesive dielectric layer.