A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

A semiconductor device includes a support member, a first switching element, a second switching element, a first passive element, a second passive element, and an electrical conductor. The support member includes a plurality of wiring parts, and the plurality of wiring parts include a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to the thickness direction of the support member. The first switching element is electrically connected to the first wiring section. The second switching element is electrically connected to the first switching element and the second wiring section. The first passive element has a first electrode and a second electrode, and the first electrode is bonded to the first wiring section. The second passive element has a third electrode and a fourth electrode, and the fourth electrode is bonded to the second wiring section. The electrical conductor connects the second electrode and the third electrode to each other. At least one of the first passive element and the second passive element is a capacitor.

A component carrier has a stack including at least one electrically conductive layer structure and/or at least one electrically insulating layer structure. A component is embedded in the stack. The component includes a redistribution structure with at least one vertically protruding electrically conductive pad, and an electrically conductive material on at least part of said at least one pad. A method of manufacturing a component carrier is also disclosed.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The package includes a substrate having a glass core layer, where the glass core layer includes a first major surface, a second major surface, and a cavity disposed between the first major surface and the second major surface of the glass core layer. The package also includes a die disposed in the cavity of the glass core layer, an encapsulant disposed in the cavity between the die and a sidewall of the cavity, a first patterned conductive layer disposed adjacent the first major surface of the glass core layer, and a second patterned conductive layer disposed adjacent the second major surface of the glass core layer. The die is electrically connected to at least one of the first and second patterned conductive layers.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The first mold compound resides over the active layer without silicon crystal, which has no germanium content, in between. The multilayer redistribution structure includes redistribution interconnections and a number of bump structures that are at bottom of the multilayer redistribution structure and electrically coupled to the mold device die via the redistribution interconnections.

There is provided a semiconductor device that includes a wiring layer, a plurality of bonding layers arranged on the wiring layer and having conductivity, and a semiconductor element having a rear surface facing the wiring layer and a plurality of pads provided on the rear surface, and bonded to the wiring layer via the plurality of bonding layers, wherein the plurality of bonding layers are arranged in a grid shape when viewed along a thickness direction, wherein each of the plurality of pads is electrically connected to a circuit formed inside the semiconductor element and any of the plurality of bonding layers, and wherein at least one of the plurality of pads is located to be spaced apart from the plurality of bonding layers when viewed along the thickness direction.

Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.

According to an embodiment, provided is a semiconductor device includes an insulating substrate; a first main terminal; a second main terminal; an output terminal; a first metal layer connected to the first main terminal; a second metal layer connected to the second main terminal; a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal; a first semiconductor chip and a second semiconductor chip provided on the first metal layer; and a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer. The second metal layer includes a first slit. Alternatively, the third metal layer includes a second slit.

Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.