A method of fabricating a BGA carrier, the method comprising combining a conductive portion and a molded dielectric portion, the dielectric portion having a top surface, a bottom surface and an inner surface, the inner surface intersecting said top surface and said bottom surface, the inner surface forming a cavity for receiving a semiconductor die; selectively bonding the semiconductor die to a top surface of the conductive portion; selectively etching part of the conductive portion; and applying solder resist to a bottom surface of the conductive portion.

A semiconductor device package includes a substrate, a stacked structure and an encapsulation layer. The substrate includes a circuit layer, a first surface and a second surface opposite to the first surface. The substrate defines at least one cavity through the substrate. The stacked structure includes a first semiconductor die disposed on the first surface and electrically connected on the circuit layer, and at least one second semiconductor die stacked on the first semiconductor die and electrically connected to the first semiconductor die. The second semiconductor die is at least partially inserted into the cavity. The encapsulation layer is disposed in the cavity and at least entirely encapsulating the second semiconductor die.

A quantum device includes a quantum chip and a holder. The holder includes a pedestal, a recess portion formed in a main surface of the pedestal so as to be opposed to the quantum chip, and a suction tube provided such that in the recess portion, a suction opening is positioned in a bottom surface of the quantum chip.

Disclosed are a semiconductor package and a manufacturing method thereof. Semiconductor chips may be disposed on a package substrate with vent holes formed therethrough, and a molding layer including a lower molding portion connected to an upper molding portion may be formed. The package substrate may include a substrate body with a plurality of unit regions, ball lands disposed in the unit regions, and first and second dam patterns that cross the unit regions and extend into edge regions, which is outside of the unit regions.

A microelectronic package (10) can include lower and upper package faces (11, 12), lower terminals (25) at the lower package face, upper terminals (45) at the upper package face, first and second microelectronic elements (30) each having memory storage array function, and conductive interconnects (15) each electrically connecting at least one lower terminal with at least one upper terminal. The conductive interconnects (15) can include first conductive interconnects (15a) configured to carry address in formation, signal assignments of a first set (70a) of the first interconnects having (180) rotational symmetry about a theoretical rotational axis (29) with signal assignments of a second set (70b) of first interconnects. The conductive interconnects (15) can also include second conductive interconnects (15b) configured to carry data information, the position of each second conductive interconnect having (180) rotational symmetry about the rotational axis (29) with a position of a corresponding no-connect conductive interconnect (15d).

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

A package structure includes a bottom plate, a semiconductor package, a top plate, a screw and an anti-loosening coating. The semiconductor package is disposed over the bottom plate. The top plate is disposed over the semiconductor package, and includes an internal thread in a screw hole of the top plate. The screw penetrates through the bottom plate, the semiconductor package and the top plate, and includes an external thread. The external thread of the screw is engaged to the internal thread of the top plate, and the anti-loosening coating is adhered between the external thread and the internal thread.

The application describes MEMS transducers having a vent structure provided in a flexible membrane of the vent structure The vent structure comprises at least one moveable portion and the vent structure is configured such that, in response to a differential pressure across the vent structure, the moveable portion is rotatable about first and second axes of rotation, which axes of rotation extend in the plane of the membrane.

A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).

A leadframe for encasing in a mold material includes a plurality of interconnected support members. A die pad is connected to the support members and includes a bottom surface. The die pad is configured to receive a die. A downset is connected to the die pad and positioned below the bottom surface. The downset includes at least one wall defining an interior volume for receiving a flow of the mold material to reduce the velocity of the mold material flow through the downset.