A package module includes a core structure including a frame having a penetrating portion, an electronic component disposed in the penetrating portion, and an insulating material covering at least a portion of each of the frame and the electronic component and filling at least a portion of the penetrating portion. The core structure further has a recessed portion in which a stopper layer is disposed on a bottom surface of the recessed portion. A semiconductor chip has a connection pad and is disposed in the recessed portion such that an inactive surface faces the stopper layer. An encapsulant covers at least a portion of each of the core structure and the semiconductor chip, and fills at least a portion of the recessed portion. An interconnect structure is disposed on the core structure and an active surface of the semiconductor chip, and includes a redistribution layer.

A substrate having an electronic component embedded therein includes a core structure including a first insulating body and a plurality of core wiring layers disposed on or in the first insulating body, and having a cavity penetrating at least a portion of the first insulating body in a thickness direction of the substrate and including a stopper layer as a bottom surface of the cavity, and an electronic component disposed in the cavity and attached to the stopper layer, and a surface of the stopper layer connected to the electronic component has a composite including at least two among a metal material, an inorganic particle, a filler, and an insulating resin.

A semiconductor package includes: a core structure having first and second surfaces and having first and second through-holes; a first semiconductor chip embedded in the core structure and having first and second contacts disposed on two opposing surfaces thereof, respectively; a first wiring layer on the surface of the core structure and connected to the first contact; a second wiring layer on the second surface of the core structure and connected to the second contact; a chip antenna disposed in the first through-hole; a second semiconductor chip in the second through-hole and having a connection pad; a first redistribution layer on the first surface of the core structure and connected to the connection terminal, the connection pad, and the first wiring layer; an encapsulant encapsulating the chip antenna and the second semiconductor chip; and a second redistribution layer on the encapsulant connecting to the second wiring layer.

A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

A semiconductor package includes: a core structure having first and second surfaces and having first and second through-holes; a first semiconductor chip embedded in the core structure and having first and second contacts disposed on two opposing surfaces thereof, respectively; a first wiring layer on the surface of the core structure and connected to the first contact; a second wiring layer on the second surface of the core structure and connected to the second contact; a chip antenna disposed in the first through-hole; a second semiconductor chip in the second through-hole and having a connection pad; a first redistribution layer on the first surface of the core structure and connected to the connection terminal, the connection pad, and the first wiring layer; an encapsulant encapsulating the chip antenna and the second semiconductor chip; and a second redistribution layer on the encapsulant connecting to the second wiring layer.

Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

An electronic device may include a semiconductor die. The electronic device may include a first routing layer. The first routing layer may be coupled to the semiconductor die. A first plurality of routing traces may be in electrical communication with the semiconductor die. The first plurality of routing traces may be positioned within a first routing footprint. The first routing footprint may have a width greater than a width of the semiconductor die. A second routing layer may be coupled to the first routing layer. A second plurality of routing traces may be in electrical communication with the first plurality of routing traces. The second plurality of routing traces may be positioned within a second routing footprint. The second routing footprint may have a width greater than the width of the first routing footprint.

An integrated circuit assembly may be formed using a phase change material as an electromagnetic shield and as a heat dissipation mechanism for the integrated circuit assembly. In one embodiment, the integrated circuit assembly may comprise an integrated circuit package including a first substrate having a first surface and an opposing second surface, and at least one integrated circuit device having a first surface and an opposing second surface, wherein the at least one integrated circuit device is electrically attached by the first surface thereof to the first surface of the first substrate; and a phase change material formed on the integrated circuit package.