A semiconductor structure includes a substrate, a redistribution layer (RDL) including a dielectric layer disposed over the substrate and a plurality of conductive members surrounded by the dielectric layer, a first conductive pillar disposed over and electrically connected with one of the plurality of conductive members, a second conductive pillar disposed over and electrically connected with one of the plurality of conductive member, a first die disposed over the RDL and electrically connected with the first conductive pillar, and a second die disposed over the RDL and electrically connected with the second conductive pillar, wherein a height of the second conductive pillar is substantially greater than a height of the first conductive pillar, and a thickness of the first die is substantially greater than a thickness of the second die.

A semiconductor package includes an interposer, a semiconductor element installed on a first surface of the interposer, bumps formed on a second surface of the interposer, and a chip component installed on the second surface of the interposer. The interposer is a silicon interposer; the semiconductor element is flip-chip mounted on the first surface of the interposer; the chip component is a thin film passive element formed by carrying out a thin film process on a silicon substrate, and a pad being formed on one surface of the thin film passive element; and the pad of the chip component is connected to a land formed on the second surface of the interposer using a conductive bonding material. According to this structure, the reliability of a bond between the interposer and the chip component of the semiconductor package can be ensured while achieving a small size.

An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.

A semiconductor package may be composed of a variety of different types of semiconductor chips of different sizes and support structures stacked within the semiconductor package. Semiconductor chips having a larger chip size may be stacked above smaller semiconductor chips. Smaller chips may be included in a layer of the semiconductor package along with a support structure which may assist supporting upper semiconductor chips, such as during a wire bonding process connecting bonding wires to chip pads of the semiconductor chips above the support structure. Use of different thicknesses of die attach film may allow for a further reduction in height of the semiconductor package. When implemented as a package housing a memory controller, DRAM semiconductor chips and non-volatile memory chips, locating the memory controller in a lower layer of the semiconductor package facilitates usage of the package substrate as a redistribution layer to provide communications between the memory controller and the DRAM and non-volatile memory chips.

A semiconductor device has a substrate. A plurality of conductive vias is formed through the substrate. A conductive layer is formed over the substrate. An insulating layer is formed over conductive layer. A portion of the substrate is removed to expose the conductive vias. A plurality of vertical interconnect structures is formed over the substrate. A first semiconductor die is disposed over the substrate. A height of the vertical interconnect structures is less than a height of the first semiconductor die. An encapsulant is deposited over the first semiconductor die and the vertical interconnect structures. A first portion of the encapsulant is removed from over the first semiconductor die while leaving a second portion of the encapsulant over the vertical interconnect structures. The second portion of the encapsulant is removed to expose the vertical interconnect structures. A second semiconductor die is disposed over the first semiconductor die.

A 3D field programmable gate array (FPGA) system, and method of manufacture therefor, includes: a field programmable gate array (FPGA) die having a configurable power on reset (POR) unit; a heterogeneous integrated circuit die coupled to the FPGA die; and a 3D power on reset (POR) output configured by the configurable POR unit for initializing the FPGA die and the heterogeneous integrated circuit die.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing fast throughput die handling for synchronous multi-die testing. For instance, there is disclosed in accordance with one embodiment a device handler for testing functional silicon devices, the device handler including: a plurality of test interface units to electrically interface to the functional silicon devices for test; a plurality of thermal actuators, each being individually movable upon at least three axes; an optical alignment unit with a plurality of pick and place head pairs, in which the optical alignment unit is to move upon a horizontal plane and is to move between the plurality of test interface units and the plurality of thermal actuators; an upward facing camera to move with the optical alignment unit, the upward facing camera to optically locate a position of the plurality of test interface units; a plurality of downward facing cameras, each to optically locate a position of one of the plurality of functional silicon devices to be tested upon one of the plurality of thermal actuators; in which the device handler is to move the optical alignment unit out from between the plurality of test interface units and the plurality of thermal actuators; and in which the device handler is to align test probes affixed to the test interface units with the plurality of functional silicon devices to be tested and electrically interface the test probes with the functional silicon devices for testing. Other related embodiments are disclosed.

Techniques for providing a unified underfill and encapsulation for integrated circuit die assemblies. These techniques include a molding technique that includes dipping a die assembly including a substrate and one or more dies into a chamber having molding material, sealing the chamber, and lowering pressure in the chamber to coax the molding material into space between the die(s) and substrate. The use of this molding technique, as contrasted with a capillary underfill technique in which underfill material is laid down adjacent dies and fills space under the die via capillary action, provides several benefits. One benefit is that the molding material can include a higher silica particle filler content (% by weight) than the material for the capillary underfill technique, which improves CTE. Another benefit is that various design constraints related to, for example, warpage and partial underfill are eliminated or improved.

A method of manufacturing a semiconductor structure includes the following operations. A substrate is provided. A first conductive pillar, a second conductive pillar arid a third conductive pillar are disposed over the substrate. The first conductive pillar comprises a first height, the second conductive pillar comprises a second height, and the third conductive pillar comprises a third height. A first die is disposed over the first conductive pillar. A second die is disposed over the second conductive pillar. A first surface of the first die and a second surface of the second die are at substantially same level.