Method and apparatus for using universal cavity wafer in wafer level packaging
09847230 · 2017-12-19
Assignee
Inventors
- Maurice Karpman (Cambridge, MA, US)
- Michael Rickley (Cambridge, MA, US)
- Andrew Mueller (Cambridge, MA, US)
- Nicole Mueller (Cambridge, MA, US)
- Jeffrey Thompson (Cambridge, MA, US)
- Charles Baab (Cambridge, MA, US)
Cpc classification
B81C1/00825
PERFORMING OPERATIONS; TRANSPORTING
H01L2924/15787
ELECTRICITY
B81C2203/0154
PERFORMING OPERATIONS; TRANSPORTING
B81B7/0077
PERFORMING OPERATIONS; TRANSPORTING
H01L2924/1579
ELECTRICITY
H01L2924/15151
ELECTRICITY
H01L24/96
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2224/04105
ELECTRICITY
H01L2924/157
ELECTRICITY
H01L24/97
ELECTRICITY
H01L23/5389
ELECTRICITY
International classification
B81C1/00
PERFORMING OPERATIONS; TRANSPORTING
B81B7/00
PERFORMING OPERATIONS; TRANSPORTING
H01L23/538
ELECTRICITY
Abstract
An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.
Claims
1. A method for forming an electronics module assembly, the method comprising: creating a cavity wafer by etching a wafer to form a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports; placing at least one group of dies in the single frontside cavity; and flowing encapsulant from a backside of the cavity wafer through the fillports and into the single frontside cavity to surround the at least one group of dies.
2. The method of claim 1, further comprising etching a single backside cavity in the cavity wafer.
3. The method of claim 1, further comprising applying heat to the electronics module assembly to cure the encapsulant; and removing excess encapsulant to the point that the encapsulant fills the backside cavity.
4. The method of claim 1, further comprising removing a backside of the cavity wafer to expose the fillports.
5. The method of claim 4, further comprising: applying heat to the electronics module assembly to cure the encapsulant; and removing excess encapsulant from the backside of the cavity wafer to form a uniform layer of the encapsulant on the backside of the cavity wafer.
6. The method of claim 5, wherein a thickness of the layer of encapsulant on the backside of the cavity wafer is determined to reduce bowing from encapsulant in the frontside cavity.
7. The method of claim 5, further comprising: removing the layer of encapsulant on the backside of the cavity wafer to reduce bowing from the encapsulant in the frontside cavity.
8. The method of claim 7, further comprising: removing a portion of the cavity wafer at the backside with a uniform thickness to further reduce bowing from the encapsulant in the frontside cavity.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The advantages of the invention described above, together with further advantages, may be better understood by referring to the following description taken in conjunction with the accompanying drawings. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention.
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DESCRIPTION
(19) The present disclosure overcomes many problems associated with conventional custom cavity design in lamination based printed circuit boards (PCBs) and iUHD applications. Various advantages and other features of the structures and methods disclosed herein will become more readily apparent to those having ordinary skill in the art from the following detailed description of certain preferred embodiments taken in conjunction with the drawings which set forth representative embodiments of the present disclosure and wherein like reference numerals identify similar structural elements.
(20) All relative descriptions herein such as left, right, up, and down are with reference to the figures and are not meant in a limiting sense. Additionally, for clarity common items and circuitry such as integrated circuits, resistors, capacitors, transistors, and the like, have not been included in the figures, as can be appreciated by those of ordinary skill in the art. Unless otherwise specified, the illustrated embodiments can be understood as providing example features of varying detail of certain embodiments and, therefore, unless otherwise specified, features, components, modules, elements, and/or aspects of the illustrations can be combined, interconnected, sequenced, separated, interchanged, positioned, and/or rearranged without materially departing from the disclosed systems or methods. Additionally, the shapes and sizes of components are also exemplary and, unless otherwise specified, can be altered without materially affecting or limiting the disclosure.
(21) In one embodiment, an electronics module assembly that packages dies using a cavity wafer is described. The electronics module assembly can include a cavity wafer that comprises a frontside cavity, a backside cavity, and a plurality of fillports, at least one group of dies being placed in the frontside cavity, and liquid encapsulant that flows from the backside of the cavity wafer, passes through the fillports, and surrounds the at least one group of dies.
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(24) The open cavity 62 can have a depth that the dies can be placed inside of the open cavity. For example, when the dies have a usual thickness of 150 μm with +/−25 μm, the open cavity can have a depth of about 220 μm so that there is enough clearance of about 50 μm between the dies and the cavity wafer. This design can make the cavity wafer tolerant of varying die thicknesses. Alternately, if a die with unusual thickness is required to be placed in the cavity, a portion of the cavity area can be cut to accommodate the thick die. This alternate embodiment is described in detail below.
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(27) In another embodiment, additional layer(s) of dies can be placed upon the first layer of the dies, according to the iUHD process. Related packaging methods are described in, for example, U.S. Pat. No. 7,727,806, U.S. Patent Publication No. 2015/0181709, and U.S. patent application Ser. No. 15/160,303.
(28) Referring to
(29) A double-sided open cavity wafer according to the present disclosure does not have cavities specific to a certain module design. This can allow the open cavity wafer to support any module design because the open cavity wafer has enough fillports to produce encapsulant flow around any layout of the dies. For example, in one embodiment, a cavity wafer having a diameter of about 100 mm can have about 2000 fillports. This high density of fillports can support any placement of dies in the open cavity.
(30) In addition, since there is no need to tailor areas of the wafer for each module, a single stock wafer can be utilized for a variety of applications, thereby allowing fabricators to stock a single part. Further, wasted wafer real estate between conventional custom cavities can be reclaimed and modules can be more closely laid out on the wafer, increasing component density and manufacturing efficiency. Accordingly, an open cavity wafer is likely to hold more modules than a conventional custom cavity wafer of the same size.
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(32) Referring to
(33) A thickness of the backside encapsulant layer 66 can impact the amount of wafer bow, as a mismatch between the CTE of the encapsulant and the wafer body can create bowing forces in the same way that encapsulant in the frontside cavity does. Because the bowing forces created on the frontside of the wafer can be oppositely directed from those created on the backside, they can be balanced to offset one another. Accordingly, the thickness of the encapsulant layer 66 can be set to minimize wafer bow or impart a desired amount of wafer bow in either direction. For example, in a case where it is known that further processing steps will induce new bowing forces in one direction, a desired amount of bow in an opposite direction can be created using the backside encapsulant layer 66. In other embodiments, however, it may be desirable to eliminate the entire backside encapsulant layer 66 by removing it chemically or mechanically and also part of entire backside of the cavity wafer. In some embodiments, a thickness of the backside encapsulant layer 66 can be in a range from about +100 μm to about −100 μm, where a negative number can mean that the entire backside encapsulant layer is removed and some of the backside of the cavity wafer is also removed corresponding to the thickness.
(34) Embodiments utilizing the above-described hybrid single-sided open cavity wafer architecture can have reduced production time and cost when compared to a double-sided open cavity wafer because one less etching step is required (i.e., there is no need to create a backside cavity). In addition, the thickness of the backside encapsulant layer 66 can be precisely adjusted, which results in better control of wafer bow.
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(36) In an embodiment in which thicker dies are combined with thinner dies, a portion of a cavity can be cut out to accommodate the thicker dies. Referring to
(37) While the above-described embodiments illustrate a circular wafer and cavity, the open cavities described herein are not limited to a round shape. In other embodiments, for example, the open cavity can have other shapes, such as a rectangular shape or a square shape.
(38) Moreover, and as mentioned above, cavity wafers are not limited to silicon construction. In some embodiments, a cavity wafer can be made of any rigid material that can tolerate 230° C. process temperatures. For example, a cavity wafer can be molded or cast using high temperature polymers such as filled epoxies, filled cyanide esters of Polyaryletherketone, ceramics such as alumina, or metal. Other manufacturing processes can be employed as well, such as additive manufacturing processes that build up a wafer from a plurality of layers of deposited material.
(39) In some embodiments, a large diameter (e.g., about 300 mm or more) cavity wafer can include a full thickness post disposed, e.g., at the center of the cavity wafer. The full thickness post can be an area that does not have fillports and can serve to prevent the wafer from flexing during the mold process.
(40) In view of the above, it will be appreciated that the open cavity wafer according to the present disclosure can increases the number of modules included in a cavity wafer. The open cavity wafer can help simplify manufacturing processes and reduce costs because open cavity wafers are independent of module design and a single design can accommodate a plurality of circuit designs. Accordingly, a larger number of cavity wafers can be manufactured, thereby reducing manufacturing cost per cavity wafer. Furthermore, the open cavity wafer enables flexible manufacturing scheduling because the cavity wafer can be produced completely independently of module design (e.g., before a module design is done).
(41) While the foregoing description has been directed to specific embodiments, it will be apparent that other variations and modifications may be made to the described embodiments, with the attainment of some or all of their advantages. Accordingly this description is to be taken only by way of example and not to otherwise limit the scope of the embodiments herein. Therefore, it is the object of the appended claims to cover all such variations and modifications as come within the true spirit and scope of the embodiments described herein. Finally, all publications and references cited herein are expressly incorporated by reference in their entirety.