Electrical interconnect bridge technology is disclosed. An electrical interconnect bridge can include a bridge substrate formed of a mold compound material. The electrical interconnect bridge can also include a plurality of routing layers within the bridge substrate, each routing layer having a plurality of fine line and space (FLS) traces. In addition, the electrical interconnect bridge can include a via extending through the substrate and electrically coupling at least one of the FLS traces in one of the routing layers to at least one of the FLS traces in another of the routing layers.

A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said first transistors controls power delivery for at least one of said second transistor, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.

A method for producing a 3D memory device, the method including: providing a first level including a single crystal layer and control circuits, where the control circuits include a plurality of first transistors; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; performing additional processing steps to form a plurality of first memory cells within the second level, where each of the first memory cells include one of a plurality of second transistors, where the control circuits include memory peripheral circuits, where at least one of the first memory cells is at least partially atop a portion of the memory peripheral circuits, and where fabrication processing of the first transistors accounts for a temperature and time associated with the processing the second level and the plurality of second transistors by adjusting a process thermal budget of the first level accordingly.

A method for producing a 3D memory device, the method comprising: providing a first level comprising a first single crystal layer; forming first alignment marks and control circuits comprising first single crystal transistors, wherein said control circuits comprise at least two metal layers; forming at least one second level above said control circuits; performing a first etch step within said second level; forming at least one third level above said at least one second level; performing a second etch step within said third level; and performing additional processing steps to form a plurality of first memory cells within said second level and a plurality of second memory cells within said third level, wherein said first etch step comprises performing a lithography step aligned to said first alignment marks.

An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Electrical interconnect bridge technology is disclosed. An electrical interconnect bridge can include a bridge substrate formed of a mold compound material. The electrical interconnect bridge can also include a plurality of routing layers within the bridge substrate, each routing layer having a plurality of fine line and space (FLS) traces. In addition, the electrical interconnect bridge can include a via extending through the substrate and electrically coupling at least one of the FLS traces in one of the routing layers to at least one of the FLS traces in another of the routing layers.

Embodiments of the invention include device packages and methods of forming such packages. In an embodiment, the method of forming a device package may comprise forming a reinforcement layer over a substrate. One or more openings may be formed through the reinforcement layer. In an embodiment, a device die may be placed into one of the openings. The device die may be bonded to the substrate by reflowing one or more solder bumps positioned between the device die and the substrate. Embodiments of the invention may include a molded reinforcement layer. Alternative embodiments include a reinforcement layer that is adhered to the surface of the substrate with an adhesive layer.

A method for forming a contact connection between a chip-and a conductor material formed on a non-conductive substrate, the chip being arranged on the substrate or on another conductor material track, a sinter paste consisting of at least 40% silver or copper being applied to respective chip contact surfaces of the chip and the conductor material track, a contact conductor being immersed in the sinter paste on the chip contact surface and in the sinter paste on the conductor material track, and the contact connection being formed by sintering the sinter paste by means of laser energy.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer, the second level including second transistors, where a top surface of the first level includes a first oxide region and a bottom surface of the second level includes a second oxide region, where the second level overlays the first level, where the second level is bonded to the first level, where the bonded includes oxide to oxide bonds, and where the second transistors are raised source drain extension transistors.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level above the second metal layer; performing a first lithography step on the second level; forming a third level on top of the second level; performing processing steps to form first memory cells within the second level and form second memory cells within the third level, where the first memory cells include at least one second transistor, and the second memory cells include at least one third transistor; and then at performing at least one deposition step which deposits gate electrodes for both the second and the third transistors, and forming at least four independent memory arrays.