A high-frequency package includes a radio wave shielding portion that shields radio waves radiated from a high-frequency component, a radio wave absorber that is arranged facing the high-frequency component and that absorbs the radio waves, and an adjusting means that enables adjustment of distance from the radio wave absorber to the high-frequency component by adjusting a position of the radio wave absorber with respect to the radio wave shielding portion.

A semiconductor device includes a first heat sink formed in contact with a back surface of a first semiconductor chip, and a second heat sink formed in contact with a back surface of a second semiconductor chip. The first heat sink is made of a material with larger thermal conductivity than that of the first semiconductor chip and has a heat dissipation surface exposed from the mold resin layer to the outside. The second heat sink is made of a material with larger thermal conductivity than that of the second semiconductor chip and has a heat dissipation surface exposed from the mold resin layer to the outside.

A packaged power device includes a ceramic package body having a top drain pad having a first area, a top source pad having a second area smaller than the first area, and a top gate pad having a third area smaller than the second area; a power device having a bottom surface affixed to a top drain pad, a die source pad coupled to the top source pad, and a die gate pad coupled to the top gate pad; and a ceramic lid affixed to the ceramic package body to form the packaged power device.

A method for adjusting an optical system is provided, including a positioning device positioning a first optical module; a measuring device measuring an angular difference between a main axis of the first optical module and an optical axis of an optical element sustained by the first optical module to obtain a measurement information; an adjusting device changing the shape of an adjustment assembly of the first optical module according to the measurement information; and assembling the first optical module with an optical object, wherein the optical axis of the optical element is parallel to a central axis of the optical object.

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and either a side surface (10, 12) of the transducer package or a non-mating surface (29) of the cap element (23).

A MEMS transducer package (1) is provide having a semiconductor die portion (3) with a thickness bounded by a first surface (9) and an opposite second surface (11). The package further has a transducer element (13) incorporated in the second surface (11) and a die back volume (7) that extends through the thickness of the semiconductor die portion (3) between the first surface (9) and the transducer element (13). The package is completed by a cap portion (23) that abuts the semiconductor die portion (3) at the first surface (9).

An oscillator includes a first package, an oscillation element housed in the first package, a first temperature controller housed in the first package, a second package adapted to house the first package, and a second temperature controller disposed outside the first package, and housed in the second package.

An oscillator includes a first package including a first base, and a first lid bonded to the first base, a first temperature controller housed in the first package, and mounted on the first base, a second temperature controller housed in the first package, and mounted on the first base, and a circuit element housed in the first package, mounted on the first base, and including at least a part of an oscillation circuit, the circuit element is disposed between the first temperature controller and the second temperature controller in a planar view.

A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.