H01L2924/16315

Compression and cold weld sealing method for an electrical via connection

Compression cold welding methods, joint structures, and hermetically sealed containment devices are provided. The method includes providing a first substrate having at least one first joint structure which comprises a first joining surface, which surface comprises a first metal; providing a second substrate having at least one second joint structure which comprises a second joining surface, which surface comprises a second metal; and compressing together the at least one first joint structure and the at least one second joint structure to locally deform and shear the joining surfaces at one or more interfaces in an amount effective to form a metal-to-metal bond between the first metal and second metal of the joining surfaces. Overlaps at the joining surfaces are effective to displace surface contaminants and facilitate intimate contact between the joining surfaces without heat input. Hermetically sealed devices can contain drug formulations, biosensors, or MEMS devices.

Light emitting module
09799802 · 2017-10-24 · ·

An embodiment relates to a light emitting module. A light emitting module according to an embodiment includes a light source unit including a light emitting device; a body including a lower portion on which the light source unit is arranged, a wall portion arranged on the lower portion and configured to surround the light source unit, and an upper portion arranged on the wall portion; an optical member arranged on the light source unit to transmit light from the light emitting device; and an adhesive member arranged between the wall portion of the body and the optical member to couple the body and the optical member, wherein the upper portion of the body is arranged between the light emitting device and the adhesive member.

Method for fabricating an electronic device comprising forming an infused adhesive and a periperal ring

A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.

RF SHIELD WITH SELECTIVELY INTEGRATED SOLDER

A shield for shielding a portion of an electronic component from undesirable emissions from neighboring components. The shield comprises a metal body configured to be attached to a substrate, and solder selectively applied to a lower portion of the metal body in manner that allows for both location and volume of the solder to be controlled. A bond is created between the solder and the metal body. The bond may be a metallurgical bond created by proximity of the solder to the at least one leg and sufficient heat and time to bring the solder to a melting temperature of the solder; or a diffusion bond created by heat and pressure. A method of attaching the shield to the substrate is also described.

Semiconductor packaging structure and process

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Cavity package with composite substrate
09728510 · 2017-08-08 · ·

An integrated device package is disclosed. The package can include a package substrate comprising a composite die pad having an upper surface and a lower surface spaced from the upper surface along a vertical direction. The composite die pad can include an insulator die pad and a metal die pad. The insulator die pad and the metal die pad can be disposed adjacent one another along the vertical direction. The substrate can include a plurality of leads disposed about at least a portion of a perimeter of the composite die pad. An integrated device die can be mounted on the upper surface of the composite die pad.

ELECTRONIC ELEMENT MOUNTING SUBSTRATE, ELECTRONIC DEVICE, ELECTRONIC MODULE, AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT MOUNTING SUBSTRATE
20220270958 · 2022-08-25 · ·

An electronic element mounting substrate includes a first insulating layer, a second insulating layer, a first metal layer, and a through-hole conductor. The first insulating layer and the second insulating layer are aligned in a first direction. The first metal layer is positioned between the first insulating layer and the second insulating layer. The through-hole conductor extends in the first direction from the first insulating layer through the second insulating layer. The first metal layer includes a first portion positioned away from the through-hole conductor and a second portion in contact with the through-hole conductor. The second portion has a larger thickness than the first portion.

Semiconductor package structure

A semiconductor package structure includes a substrate. The substrate includes a first ground layer. The first ground layer has a body and a first tooth protruding from a side of the body. The first tooth has a first lateral side. The first lateral side of the first tooth is inclined relative to the side of the body in a top view of the first ground layer.

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Molded Air-cavity Package and Device Comprising the Same

The present invention relates to a molded air-cavity package. In addition, the present invention is related to a device comprising the same. The present invention is particularly related to molded air-cavity packages for radio-frequency ‘RF’ applications including but not limited to RF power amplifiers.

Instead of using hard-stop features that are arranged around the entire perimeter of the package in a continuous manner, the present invention proposes to use spaced apart pillars formed by first and second cover supporting elements. By using only a limited amount of pillars, e.g. three or four, the position of the cover relative to the body can be defined in a more predictable manner. This particularly holds if the pillars are arranged in the outer corners of the package.