A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor die, and a first capacitor. The substrate has a wiring structure. The redistribution layer is disposed over the substrate. The first semiconductor die is disposed over the redistribution layer. The first capacitor is disposed in the substrate and is electrically coupled to the first semiconductor die. The first capacitor includes a first capacitor substrate, a plurality of first capacitor cells, and a first through via. The first capacitor substrate has a first top surface and a first bottom surface. The first capacitor cells are disposed in the first capacitor substrate. The first through via is disposed in the first capacitor substrate and electrically couples the first capacitor cells to the wiring structure on the first top surface and the first bottom surface.

A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.

At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Embodiments are generally directed to module installation on printed circuit boards with embedded trace technology. An embodiment of a printed circuit board includes one or more layers including a top layer; multiple embedded traces that are contained in an area of a surface of a first layer of the one or more layers of the printed circuit board; and a first module, the first module being installed on the plurality of printed traces in the area.

An electronics package is disclosed. The electronics package includes a first radio frequency (RF) substrate layer, a second RF substrate layer, and a plurality of conductive layers disposed adjacent to at least one of the first RF substrate layer and the second RF substrate layer and including an inner conductive layer disposed between and adjacent to both the first RF substrate layer and the second RF substrate layer. The inner conductive layer bonds the first RF substrate layer to the second RF substrate layer. The electronics package also includes a plurality of conductive interconnects extending through the first RF substrate layer and the second RF substrate layer and electrically coupled between at least two of the plurality of conductive layers.

A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

A semiconductor package includes: a package substrate; a first re-distribution layer disposed on the package substrate; a second re-distribution layer disposed between the package substrate and the first re-distribution layer; a connection substrate interposed between the first re-distribution layer and the second re-distribution layer, wherein a connection hole penetrates the connection substrate; a first semiconductor chip mounted on a first surface of the first re-distribution layer; a first connection chip mounted on a second surface, opposite to the first surface, of the first re-distribution layer and disposed in the connection hole; a second connection chip mounted on a first surface of the second re-distribution layer and disposed in the connection hole; and a first lower semiconductor chip mounted on a second surface, opposite to the first surface, of the second re-distribution layer.

A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.

A semiconductor package including at least one functional die; at least one dummy die free of active circuit, wherein the dummy die comprises at least one metal-insulator-metal (MIM) capacitor; and a redistribution layer (RDL) structure interconnecting the MIM capacitor to the at least one functional die.