A module having high reliability in terms of its connection to an external unit is provided. The module includes: a wiring substrate that mounts components and 3b thereon; a substrate electrode formed on one main surface of the wiring substrate; a columnar conductor connected at one end to the substrate electrode; an intermediate coating formed to cover an outer peripheral surface of the columnar conductor; and a first sealing resin layer provided to cover one main surface of the wiring substrate and the intermediate coating. The intermediate coating has a coefficient of linear expansion which is between that of the columnar conductor and that of the first sealing resin layer.

A package structure includes a second substrate. A second component is connected to the second substrate, and at least a part of the second component is connected to the second connecting rod through the second heat dissipation block, so that heat of the at least a part of the second component can be further transferred to the second connecting rod through the second heat dissipation block, and then transferred, through the second connecting rod, to the second substrate or another structure connected to the second connecting rod. In this way, the heat of the second component is transferred out, and heat conduction paths of the second component are increased.

A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

A semiconductor package system is disclosed. The system includes a first interposer and a first integrated circuit die electrically coupled and thermally coupled to a first side of the first interposer. The system further includes a second integrated circuit die electrically coupled and thermally coupled to a second side of the first interposer. The system further includes a ring carrier electrically coupled and thermally coupled to the first interposer. The ring carrier is configured to transmit an input to the first interposer. In some embodiments, the system further includes at least one thermal spreader thermally coupled to the ring carrier and at least one of the first integrated circuit, the second integrated circuit, or the first interposer.

A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package substrate having a first inductive coil formed from a first conductive layer and a second inductive coil formed from a second conductive layer. The first conductive layer and the second conductive layer are separated by a non-conductive material. A first semiconductor die is attached to a first major side of the package substrate. The first semiconductor die is conductively interconnected to the first inductive coil. A second semiconductor die is attached to the first major side of the package substrate. A first wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.

A semiconductor package comprises a substrate, a pad, a first isolation layer, an interconnection layer, and a conductive post. The substrate has a first surface and a second surface opposite the first surface. The pad has a first portion and a second portion on the first surface of the substrate. The first isolation layer is disposed on the first surface and covers the first portion of the pad, and the first isolation layer has a top surface. The interconnection layer is disposed on the second portion of the pad and has a top surface. The conductive post is disposed on the top surface of the first isolation layer and on the top surface of the interconnection layer. The top surface of the first isolation layer and the top surface of the interconnection layer are substantially coplanar.

A semiconductor package includes an interposer, a die and a first encapsulant. The die is bonded to the interposer, the die has a protective layer thereon, wherein the protective layer and the interposer are disposed on opposite sides of the die, and the protective layer is not extended beyond an outer sidewall of the die. The first encapsulant is disposed aside the die and the protective layer.

An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.

An electronic package with passive components located between a first substrate and a second substrate. The electronic package can include a first substrate including a device interface for communication with an electronic device. An interposer can be electrically coupled to the first substrate. A second substrate can be offset from the first substrate at a distance. The second substrate can be electrically coupled to the first substrate through the interposer. A passive component can be attached to one of the first substrate or the second substrate. The passive component can be located between the first substrate and the second substrate. A height of the passive component can be is less than the distance between the first substrate and the second substrate. The second substrate can include a die interface configured for communication with a die. The die interface can be communicatively coupled to the passive component.