A method for manufacturing a semiconductor device includes at least the following three steps: (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and (C) A step of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. The adhesive film includes a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side thereof. The adhesive resin layer includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V.sub.1 of a surface of the adhesive resin layer after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A method for manufacturing a semiconductor device includes at least the following three steps: (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and (C) A step of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. The adhesive film includes a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side thereof. The adhesive resin layer includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V.sub.1 of a surface of the adhesive resin layer after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.