A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes an interposer substrate over the wiring substrate. The interposer substrate includes a redistribution structure, a dielectric layer, a conductive via, and a plurality of first dummy vias, the dielectric layer is over the redistribution structure, the conductive via and the first dummy vias pass through the dielectric layer, the first dummy vias surround the conductive via, and the first dummy vias are electrically insulated from the wiring substrate. The chip package structure includes a chip structure over the interposer substrate. The chip structure is electrically connected to the conductive via, and the chip structure is electrically insulated from the first dummy vias.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

A semiconductor package includes: a package substrate; an interposer disposed on the package substrate; a first semiconductor chip mounted on the interposer; a second semiconductor chip mounted on the interposer adjacent to the first semiconductor chip, the second semiconductor chip having an overhang portion that does not overlap the interposer in a vertical direction; a first underfill disposed between the package substrate and the interposer, the first underfill having a first extension portion extending from a side surface of the interposer; a second underfill disposed between the interposer and the second semiconductor chip, the second underfill having a second extension portion extending to an upper surface of the package substrate along at least a portion of the first extension portion of the first underfill, wherein the second extension portion protrudes from the overhang portion contact the upper surface of the package substrate.

Structures and methods for reducing thermal expansion mismatch during chip scale packaging are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes a first metal layer over a substrate, a dielectric region, and a polymer region. The first metal layer comprises a first device metal structure. The dielectric region is formed over the first metal layer. The polymer region is formed over the dielectric region. The dielectric region comprises a plurality of metal layers and an inter-metal dielectric layer comprising dielectric material between each pair of two adjacent metal layers in the plurality of metal layers. Each of the plurality of metal layers comprises a dummy metal structure over the first device metal structure. The dummy metal structures in each pair of two adjacent metal layers in the plurality of metal layers shield respectively two non-overlapping portions of the first device metal structure from a top view of the semiconductor structure.

A semiconductor package includes a package substrate, an interposer provided on the package substrate, a plurality of semiconductor devices on the interposer and spaced apart from each other, and electrically connected to each other through the interposer, at least one dummy member on the interposer to cover at least one corner portion of the interposer and arranged spaced apart from a first semiconductor device among the plurality of semiconductor devices, and a sealing member contacting the interposer and filling a space between the first semiconductor device and the at least one dummy member so as to cover a first side surface of the first semiconductor device, a first side surface of the at least one dummy member, and an upper surface of the dummy member. A second side surface, opposite to the first side surface, of the at least one dummy member is uncovered by the sealing member.

A package structure includes an encapsulant, a patterned circuit structure, at least one electronic component and a shrinkage modifier. The patterned circuit structure is disposed on the encapsulant and includes a pad. The electronic component is disposed on the patterned circuit structure, and includes a bump electrically connected to the pad. The shrinkage modifier is encapsulated in the encapsulant and configured to reduce a relative displacement between the bump and the pad along a horizontal direction in an environment of temperature variation.

A semiconductor package includes a lower semiconductor chip, a first upper semiconductor chip including upper pads, and bonding wires coupled to the substrate and the upper pads. The first upper semiconductor chip has a first overhang region adjacent to a first lateral surface of the first upper semiconductor chip, a second overhang region adjacent to a second lateral surface of the first upper semiconductor chip, and a first corner overhang region adjacent to a corner where the first and second lateral surfaces meet with each other. The upper pads include first upper pads on the first overhang region and second upper pads on the second overhang region. The number of the first upper pads is less than that of the second upper pads. The upper pads are spaced apart from the first corner overhang region.

A semiconductor device of an embodiment includes: a wiring board; a semiconductor chip mounted on the wiring board; and a resin-containing layer bonded on the wiring board so as to fix the semiconductor chip to the wiring board. The resin-containing layer contains a resin-containing material having a breaking strength of 15 MPa or more at 125° C.

A semiconductor device includes a wiring board, a semiconductor chip arranged on the wiring board, and a plurality of bumps arranged between the wiring board and the semiconductor chip, wherein the wiring board includes a first conductor, a second conductor, a third conductor, a first via, a second via, and a third via, wherein the second conductor is arranged at a position closer to a center of the semiconductor chip than the first conductor is to the center, as seen in a thickness direction, the first conductor and the second conductor are arranged next to each other without another conductor interposed therebetween, as seen in the thickness direction, and a first distance between the first conductor and the second conductor is larger than a second distance between the first conductor and the third conductor.