A die bonding structure is provided. The die bonding structure includes a chip, an adhesive layer under the chip, a bonding layer under the adhesive layer, and a heat dissipation substrate under the bonding layer. The bonding layer includes a silver nano-twinned thin film, which has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include at least 90% of [111] crystal orientation.

Disclosed is a semiconductor device comprising a semiconductor substrate, an under-bump pattern on the semiconductor substrate and including a first metal, a bump pattern on the under-bump pattern, and an organic dielectric layer on the semiconductor substrate and in contact with a sidewall of the bump pattern. The bump pattern includes a support pattern in contact with the under-bump pattern and having a first width, and a solder pillar pattern on the support pattern and having a second width. The first width is greater than the second width. The support pattern includes at least one of a solder material and an intermetallic compound (IMC). The intermetallic compound includes the first metal and the solder material.

An electronic device integration method and integrated electronic device. The integration method may include the steps of preparing a first electronic device by forming an electrically conductive trace overlying a substrate, forming a barrier layer overlying the electrically conductive trace, forming one or more electrically conductive interconnects on the barrier layer, and forming a bonding layer overlying the trace and/or at least partially surrounding the one or more interconnects. The barrier layer is configured to prevent formation of an intermetallic compound between the trace and interconnect structures, while still enabling electrical communication between the trace and interconnect. The integration method may further include the steps of direct bonding the first electronic device to a second electronic device, direct bonding a third electronic device to the second electronic device, and so on. A high-temperature treatment and functional testing of the vertically integrated electronic device may be conducted after each stack sequence.

Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

A method is provided to fabricate a high-power module. A non-touching needle is used to paste a slurry on a heat-dissipation substrate. The slurry comprises nano-silver particles and micron silver particles. The ratio of the two silver particles is 9:1˜1:1. The slurry is pasted on the substrate to be heated up to a temperature kept holding. An integrated chip (IC) is put above the substrate to form a combined piece. A hot presser processes thermocompression to the combined piece to form a thermal-interface-material (TIM) layer with the IC and the substrate. After heat treatment, the TIM contains more than 99 percent of pure silver with only a small amount of organic matter. No volatile organic compounds would be generated after a long term of use. No intermetallic compounds would be generated while the stability under high temperature is obtained. Consequently, embrittlement owing to procedure temperature is dismissed.

Disclosed are examples of integrated circuit (IC) structures and techniques to fabricate IC structures. Each IC package may include a die (e.g., a flip-chip (FC) die) and one or more die interconnects to electrically couple the die to a substrate. The die interconnect may include a pillar, a wetting barrier on the pillar, and a solder cap on the wetting barrier. The wetting barrier may be wider than the pillar such that during solder reflow, solder wetting of sidewall of the pillar is minimized or prevented all together. The die interconnect may also include a low wetting layer formed on the wetting barrier, which can further mitigate solder wetting problems.

A method for bonding two superconducting integrated circuits (“chips”), such that the bonds electrically interconnect the chips. A plurality of indium-coated metallic posts may be deposited on each chip. The indium bumps are aligned and compressed with moderate pressure at a temperature at which the indium is deformable but not molten, forming fully superconducting connections between the two chips when the indium is cooled down to the superconducting state. An anti-diffusion layer may be applied below the indium bumps to block reaction with underlying layers. The method is scalable to a large number of small contacts on the wafer scale, and may be used to manufacture a multi-chip module comprising a plurality of chips on a common carrier. Superconducting classical and quantum computers and superconducting sensor arrays may be packaged.

Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

A structure for a semiconductor device includes a copper (Cu) layer and a first nickel (Ni) alloy layer with a Ni grain size a.sub.1. The structure also includes a second Ni alloy layer with a Ni grain size a.sub.2, wherein a.sub.1<a.sub.2. The first Ni alloy layer is between the Cu layer and the second Ni alloy layer. The structure further includes a tin (Sn) layer. The second Ni alloy layer is between the first Ni alloy layer and the Sn layer.