Patent classifications
H01M10/282
Embedded solid-state battery
Elements of an electrochemical cell using an end to end process. The method includes depositing a planarization layer, which manufactures embedded conductors of said cell, allowing a deposited termination of optimized electrical performance and energy density. The present invention covers the technique of embedding the conductors and active layers in a planarized matrix of PML or other material, cutting them into discrete batteries, etching the planarization material to expose the current collectors and terminating them in a post vacuum deposition step.
PRESSURE REGULATING VALVE
A pressure regulating valve is attached to each of a plurality of power storage modules. The pressure regulating valve allows internal spaces of the power storage modules to be open, respectively, and has a short-circuit preventing structure for preventing an electrolytic solution coming outside of the power storage modules from causing a short circuit with another power storage module or a short circuit between other power storage modules.
Bipolar battery assembly
The invention relates to an article comprising: a) one or more stacks of battery plates comprising one or more bipolar plates; b) located between each plate is a separator and a liquid electrolyte; further comprising one of more of the features: an integrated valve and an integrated channel communicating with the valve.
COMPOSITE SUBSTRATE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME
Disclosed are composite substrates and rechargeable lithium batteries. The composite substrate includes a support layer, a first metal layer on a top surface of the support layer, and a second metal layer on a bottom surface of the support layer. At least one of the first metal layer and the second metal layer includes a first region to which a tab is configured to be attached, and a second region different from the first region. A ratio of surface roughness of the first region to surface roughness of the second region is in a range of about 3.5 to about 7.