An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

A microstrip DC block includes a first signal line having a first signal line end and a first centreline (C.sub.1); a second signal line having a second signal line end and a second centreline (C.sub.2); a first spur-line extending from the first signal line end towards the second signal line end; a first stepped impedance line extending from the first signal line end towards the second signal line end, wherein the first stepped impedance line is parallel to the first spur line; a second spur-line extending from the second signal line end towards the first signal line end; a second stepped impedance line extending from the second signal line end towards the first signal line end, wherein the second stepped impedance line is parallel to the second spur line, and wherein the second stepped impedance line is coupled to the first stepped impedance line.

The present disclosure relates to an interposer (120), which is a circuit board that has a multilayer structure and that establishes a connection between layers using a via conductor. The interposer (120) includes first and second transmission lines that are connected in series and a first stub and a second stub that are respectively connected to the first transmission line and the second transmission line. The first and second stubs are formed by wiring lines provided in respective different layers, and a second transmission line (123), which connects the first stub to the second stub, includes a via conductor and a wiring line provided in the layer where the second stub (124) is formed.

A tapped transmission line for distributing an electrical signal, such as an RF signal, to multiple modules, and/or aggregating signals from multiple modules. Embodiments of the invention provide a tapped transmission line based on a transmission-line medium along which tap elements are dispersed, so that the tap elements have a predominantly capacitive loading of the transmission-line medium. Methods for compensating the loss of the transmission-line medium are presented as well. Applications for distribution of transmitted signals, of local oscillator signals, and to aggregation of signals from multiple oscillators are disclosed. The invention is particularly applicable to integrated circuits (IC, ASIC, RFIC), and to multichannel RF systems such as phased array and MIMO systems.

Embodiments provide a filtering device, to effectively simplify assembly and tuning processes. The filtering device includes: a housing, including an inner cavity; a resonant conductor, having a resonance function, and disposed inside the inner cavity; and a pressing element, having one end disposed on the housing and another end suspended, and facing a position of an open-circuit end of the resonant conductor. A distance between the pressing element and the resonant conductor is changeable when the pressing element is pressed or drawn to adjust a resonant frequency. The filtering device provided in various embodiments is applicable to a plurality of communications devices for selecting a signal frequency.

The filter unit has a center frequency and comprises a first dielectric substrate, a first conducting plane, and at least one transmission arrangement. The at least one transmission arrangement comprises a shunt node which has a shunt connection to the conducting plane. The electrical length of the shunt connection defines the center frequency of the filter unit. The transmission arrangement further comprises a plurality of transmission lines connected in series between an input port and an output port, wherein each port is connectable to auxiliary systems with a system impedance. Moreover, each transmission line has a characteristic impedance and wherein the characteristic impedance of each transmission line is less than the system impedance.

A filter circuit includes two ports, a first resonant circuit, and a second resonant circuit. The first resonant circuit is provided between the two ports in a circuit configuration and coupled with both of the two ports. The second resonant circuit is provided between the two ports in the circuit configuration and coupled with at least one of the two ports. Coupling of the second resonant circuit and the two ports is weaker than coupling of the first resonant circuit and the two ports.

Filter modules having a wider passband are provided herein. In certain embodiments, the filter module comprises an input node; an output node; a filter disposed along a signal path extending from the input node to the output node; a strip line configured to generate an inductance between the filter and a ground such to increase a bandwidth of a passband of the filter module, the single strip line disposed on multiple layers, each of the multiple layers defined by a plurality of pulse-shaped) portions of the strip line disposed on a plane.

An electromagnetic bandgap structure includes a plurality of resonators. Each of the resonators includes a dielectric substrate, a patch conductor formed on an upper surface of the dielectric substrate, and a conductor layer formed on a lower surface of the dielectric substrate. The patch conductor and the conductor layer are electrically connected to each other by via holes penetrating the dielectric substrate. A plurality of long holes and are formed on the lower surface of the dielectric substrate. A long hole conductor layer is formed on an inner wall surface of the long holes and. The conductor layer and the long hole conductor layer are electrically connected to each other to thereby form an integral conductor surface. The via holes are electrically connected to the conductor surface in the long holes and.

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.