The present invention reduces an electromagnetic coupling that can occur between a first signal line provided on a first substrate and a second signal line provided on a main surface of a second substrate on the first substrate side. A wireless module (10) includes an RFIC (28), a baseband IC (16), a first substrate (11) on which first signal lines (121 through 126) for transmitting a baseband signal are provided, and a second substrate (21) provided with second signal lines (2201 through 2232) for transmitting an RF signal on a main surface (211). The first substrate (11) is provided with a pseudo conductor wall (post wall 13) for shielding the first signal lines (121 through 126) and the second signal lines (2201 through 2232).

A Printed Circuit Board (PCB) and methods for manufacturing the PCB board are provided. The PCB includes a Radio Frequency (RF) signal transition at a RF signal pad. Multiple conductive layers other than a conductive signal layer of the PCB and conductive portions of the conductive signal layer not in electrical contact with a RF signal transmission trace have common ground connections forming a ground cage structure within the PCB around the RF signal pad and RF the signal transmission trace.

An electromagnetic bandgap structure includes a plurality of resonators. Each of the resonators includes a dielectric substrate, a patch conductor formed on an upper surface of the dielectric substrate, and a conductor layer formed on a lower surface of the dielectric substrate. The patch conductor and the conductor layer are electrically connected to each other by via holes penetrating the dielectric substrate. A plurality of long holes and are formed on the lower surface of the dielectric substrate. A long hole conductor layer is formed on an inner wall surface of the long holes and. The conductor layer and the long hole conductor layer are electrically connected to each other to thereby form an integral conductor surface. The via holes are electrically connected to the conductor surface in the long holes and.

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

A signal transmission line includes a laminate, a signal conductor, a hollow portion, and a reinforcing conductor. The laminate includes a flexible laminate including resin layers each of which has flexibility. The signal conductor extends in a signal transmission direction of the laminate and is disposed in an intermediate position in a laminating direction of the resin layers. The hollow portion is in the laminate and defined by an opening provided at a portion of the plurality of resin layers. The reinforcing conductor is in the laminate. The hollow portion is disposed at a position overlapping with the signal conductor, in a plan view of the laminate from a surface perpendicular or substantially perpendicular to the laminating direction. The reinforcing conductor is disposed at a position different from the position of the hollow portion in a plan view.

A film transmission line includes a dielectric layer including at least one of a liquid crystal polymer (LCP) structure or a cyclo olefin polymer (COP) structure, and an electrode line on the dielectric layer. A signal loss level (S21) defined of the film transmission line is −1.5 dB or more at a frequency in a range from 20 GHz to 30 GHz. The film transmission line may be applied to a high frequency thin film antenna and an image display device.

A transition structure for millimeter wave is provided. The transition structure includes a first layer signal element coupled to an end of a first transmission line and a plurality of first layer ground elements surrounding the end of the first transmission line equidistantly from the end of the first transmission line and disposed along two opposite sides of a strip body of the first transmission line equidistantly from the strip body of the first transmission line. The transition structure further includes an intermediate layer signal element coupled to the first layer signal element and a plurality of intermediate layer ground elements surrounding the intermediate layer signal element quasi-coaxially. A multilayer transition structure including a multilayer structure and the transition structure is also provided. Therefore, the problem of operating frequency caused by the thickness of the multilayer structure can be overcome, thereby increasing the resonance frequency of the multilayer structure.

A method of making a semiconductor device includes forming a first transmission line over a substrate. The method includes forming a second transmission line over the substrate. The method further includes depositing a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The method further includes depositing a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts the first transmission line or the second transmission line.

A multilayer substrate includes layers stacked on each other in an up-down direction of a multilayer body. The layers include a first spacer, a first ground conductive layer above the first spacer, and a signal conductive layer that overlaps the first ground conductive layer and is located below the first spacer. First through-holes pass through the first spacer and are arranged along a first direction. A distance between centroids of first through-holes adjacent to each other in the first direction is uniform or substantially uniform. Sets of first through-holes are provided in the first spacer. Sets of first through-holes are arranged along a second direction. A distance between centroids of first through-holes adjacent to each other in the second direction is uniform or substantially uniform. At least one first through-hole is a first hollow through-hole overlapping the signal conductive layer.