A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained

A photonic-based microwave generator includes a mode-locked laser that generates an optical pulse train, a feedback photodiode that samples the optical pulse train, and a servo amplifier that processes the photodiode output into a servo signal. The servo signal controls the mode-locked laser to suppress relative intensity noise on the optical pulse train. The microwave generator may also include a microwave photodiode for converting the optical pulse train into a microwave signal. The microwave generator may also include a second servo amplifier that processes a low-frequency output of the microwave photodiode into a second servo signal that drives an optical modulator that modulates the optical pulse train. The microwave photodiode, optical modulator, and servo amplifier form a feedback loop that suppresses amplitude noise on the microwave signal. By reducing amplitude noise and relative intensity noise, phase noise caused by amplitude-to-phase noise conversion is minimized.

A microchip laser and a handpiece including the microchip laser. The microchip laser includes a laser medium with input and output facets. The input facet is coated with a highly reflective dielectric coating at microchip laser wavelength and highly transmissive at pump wavelength. The output facet is coated with a partially reflective at microchip laser wavelength dielectric coating. A saturable absorber attached by intermolecular forces to output facet of microchip laser. A handpiece for skin treatment includes the microchip laser.

A light absorbing layer which is bonded to a laser medium to configure a bonded body, wherein the light absorbing layer is formed from a glass material and, in an oscillation wavelength (wavelength of 650 nm or more and less than 1400 nm) of the laser medium, an absorption coefficient is 0.1 to 10.0 cm.sup.-1, a difference in refractive index between the light absorbing layer and the laser medium is within ±0.1, and a difference in linear thermal expansion coefficient between the light absorbing layer and the laser medium is within ±1 ppm/K. The present invention relates to a light absorbing layer for preventing parasitic oscillation, and aims to provide a material capable of suppressing the manufacturing cost and which can be easily processed for preparing a bonded body.

A joined body (10) includes an optical material (11) and a cooling material (12) that are capable of transmitting light and are joined together. At a joining interface between the optical material (11) and the cooling material (12), the joined body (10) is capable of transmitting light, and also an atom contained in the optical material (11) diffusively enters the cooling material (12) in such a degree that an interference fringe is not generated in the joined body (10). A diffusive entry length of an atom contained in the optical material (11) into the cooling material (12) may be in a range from approximately 1.0 nm to approximately 10 μm.

The present disclosure relates to a laser system. The laser system may have at least non-flat gain media disc. At least one pump source may be configured to generate a beam that pumps the non-flat gain media disc. A laser cavity may be formed by the pump source and the non-flat gain media disc. An output coupler may be included for receiving and directing the output beam toward an external component.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained

A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.

In one aspect, a composition of matter includes: a plurality of particles in a thixotropic suspension to form an ink, where the plurality of particles are present in an amount of at least about 20 vol %, and the plurality of particles include: a first host medium material containing at least one of: one or more lasing species dopants; and one or more other dopant species; and a second host medium material containing at least one other dopant species. The composition of matter further includes a liquid phase present in an amount greater than 20 vol % and less than about 80 vol %, where the liquid phase comprises at least one of: at least one surfactant; at least one polar organic solvent; and at least one binder.