A laser apparatus including an optical element made of a CaF.sub.2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF.sub.2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF.sub.2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

A tunable laser source that includes multiple gain elements and uses a spatial light modulator in an external cavity to produce spectrally tunable output is claimed. Several designs of the external cavity are described, targeting different performance characteristics and different manufacturing costs for the device. Compared to existing devices, the tunable laser source produces high output power, wide tuning range, fast tuning rate, and high spectral resolution.

Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting device, conditions one or more characteristics of the input light, and causes the light-emitting device to generate light having the one or more characteristics of the conditioned light.

There may be provided a laser unit including a display configured to display one or both of electric power consumed by the laser unit and electric energy consumed by the laser unit.

A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

A preliminary ionization discharge device used in a laser chamber of a laser apparatus using preliminary ionization includes a dielectric pipe; a preliminary ionization inner electrode provided inside the dielectric pipe; and a preliminary ionization outer electrode provided outside the dielectric pipe. The preliminary ionization outer electrode includes: a contact plate part configured to contact the dielectric pipe; and an elastic part configured to exert a force in a direction in which the contact plate part pushes the dielectric pipe.

A laser chamber including a first space and a second space in communication with the first space may include: a first discharge electrode disposed in the first space; a second discharge electrode disposed in the first space to face the first discharge electrode; a fan disposed in the first space and configured to flow laser gas between the first discharge electrode and the second discharge electrode; a peaking condenser disposed in the second space; and an electrical insulating member configured to partition the first space and the second space from one another, and disposed to allow the laser gas to pass through between the first space and the second space.

Disclosed is a semiconductor laser device assembly including a semiconductor laser device; and a dispersion compensation optical system, where a laser light exited from the semiconductor laser device is incident and exits to control a group velocity dispersion value of the laser light exited from the semiconductor laser device per wavelength.

In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.

A narrow band laser apparatus may include: a laser resonator; a pair of discharge electrodes; a power supply; a first wavelength measurement device configured to output a first measurement result; a second wavelength measurement device configured to output a second measurement result; and a control unit. The control unit calibrates the first measurement result, based on a difference between the second measurement result derived when the control unit controls the power supply to apply a pulsed voltage to the pair of discharge electrodes with a first repetition frequency and the second measurement result derived when the control unit controls the power supply to apply the pulsed voltage to the pair of discharge electrodes with a second repetition frequency, the second repetition frequency being higher than the first repetition frequency.