A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

The invention relates to phosphate-based glasses suitable for use as a solid laser medium, doped with Er3+ and sensitized with Yb, in “eye-safe” applications. In particular, the invention relates to improving the physical properties of such phosphate-based laser glass composition, particularly with regards to strength of the glass structure and improved thermal shock resistance.

The invention relates to phosphate-based glasses suitable for use as a solid laser medium, doped with Er3+ and sensitized with Yb, in “eye-safe” applications. In particular, the invention relates to improving the physical properties of such phosphate-based laser glass composition, particularly with regards to strength of the glass structure and improved thermal shock resistance.

The invention relates to a measuring device for acquiring surface data and/or interfaces of a workpiece to be processed by a laser processing device. The laser processing device comprises a laser source and a processing head which is configured to provide at least one high-energy processing beam, in particular a laser beam. The laser source and the processing head are interconnected by an optical fiber and the measuring device comprises a scanning device configured as an optical coherence tomograph for surface scanning and/or interface scanning of the workpiece. The optical fiber which interconnects the laser source and the processing head forms a component of the scanning device.

The invention relates to a measuring device for acquiring surface data and/or interfaces of a workpiece to be processed by a laser processing device. The laser processing device comprises a laser source and a processing head which is configured to provide at least one high-energy processing beam, in particular a laser beam. The laser source and the processing head are interconnected by an optical fiber and the measuring device comprises a scanning device configured as an optical coherence tomograph for surface scanning and/or interface scanning of the workpiece. The optical fiber which interconnects the laser source and the processing head forms a component of the scanning device.

Seeder for use with a fiber laser for generating an arbitrary shaped pulse, comprising an amplified spontaneous emission (ASE) source, a spectral filter and an arbitrary waveform generator (AWG) modulator, the ASE source for generating a continuous wave (CW) broadband pulse, the spectral filter being coupled with the ASE source for narrowing the CW broadband pulse, and the AWG modulator being coupled with the spectral filter for shaping the narrowed CW broadband pulse to an arbitrary pulse shape.

Seeder for use with a fiber laser for generating an arbitrary shaped pulse, comprising an amplified spontaneous emission (ASE) source, a spectral filter and an arbitrary waveform generator (AWG) modulator, the ASE source for generating a continuous wave (CW) broadband pulse, the spectral filter being coupled with the ASE source for narrowing the CW broadband pulse, and the AWG modulator being coupled with the spectral filter for shaping the narrowed CW broadband pulse to an arbitrary pulse shape.

A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

Apparatus for providing optical radiation (9), which apparatus comprises; a first seed source (1) for providing first seeding radiation (11); a second seed source (2) for providing second seeding radiation (12); a coupler (3) connected to the first seed source (1) and the second seed source (2) for coupling the first seeding radiation (11) and the second seeding radiation (12) together; and at least one amplifier (4) for amplifying the first seeding radiation (11) and the second seeding radiation (12).

Apparatus for providing optical radiation (9), which apparatus comprises; a first seed source (1) for providing first seeding radiation (11); a second seed source (2) for providing second seeding radiation (12); a coupler (3) connected to the first seed source (1) and the second seed source (2) for coupling the first seeding radiation (11) and the second seeding radiation (12) together; and at least one amplifier (4) for amplifying the first seeding radiation (11) and the second seeding radiation (12).