A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

Provided is a solid-state laser device in which a linear resonator including an output mirror and a rear mirror, a laser rod, and optical members are provided on a common base and are contained in a housing having the base as a portion. A holding part is provided to hold an excitation light source that extends parallel to the laser rod on a side of the laser rod opposite to the base. The optical members including a Q-switch are disposed between the laser rod and the rear mirror. An upper end position of the output mirror is at a position lower than a lower end position of the excitation light source held by the holding part, with the base as a reference. The holding part holds the excitation light source so as to be capable of being inserted and extracted with respect to the output mirror side in a longitudinal direction of the excitation light source.

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.

A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.

Disclosed is a servo matching control mid-infrared differential dual-wavelength laser based on Nd:MgO:PPLN, The 813 nm semiconductor pumping source, the energy transmitting optical fiber, the first focusing lens, the second focusing lens, the first 45-degree beam splitter, the mid-infrared idle frequency light output mirror, the polarized crystal, the servo motor, the mid-infrared parametric light total reflection mirror, the microprogrammed control unit, the second 45-degree beam splitter, the electro-optical crystal and the 1093 nm fundamental frequency light total reflection mirror are sequentially placed from right to left in a straight cavity of the laser; and the 1084 nm fundamental frequency light total reflection mirror is placed in a bent-shape cavity of the laser, corresponding to a position of the second 45-degree beam splitter, such the second 45-degree beam splitter can reflect incident light to the 1084 nm fundamental frequency light total reflection mirror.

Disclosed is a servo matching control mid-infrared differential dual-wavelength laser based on Nd:MgO:PPLN, The 813 nm semiconductor pumping source, the energy transmitting optical fiber, the first focusing lens, the second focusing lens, the first 45-degree beam splitter, the mid-infrared idle frequency light output mirror, the polarized crystal, the servo motor, the mid-infrared parametric light total reflection mirror, the microprogrammed control unit, the second 45-degree beam splitter, the electro-optical crystal and the 1093 nm fundamental frequency light total reflection mirror are sequentially placed from right to left in a straight cavity of the laser; and the 1084 nm fundamental frequency light total reflection mirror is placed in a bent-shape cavity of the laser, corresponding to a position of the second 45-degree beam splitter, such the second 45-degree beam splitter can reflect incident light to the 1084 nm fundamental frequency light total reflection mirror.

The present invention provides a repetition frequency-tunable optical frequency comb generated by basis of optical feedback. The optical frequency comb comprises a single-frequency laser resonant cavity, a wavelength division multiplexer, a single-mode semiconductor pump light source, an optical circulator, a first optical fiber coupler, a second optical fiber coupler, a photoelectric detector, a highly-stable signal source, an error signal processing system, a laser frequency modulation device and a tunable laser-delay module. The present invention performs delay-time processing to the single-frequency laser by the tunable laser-delay module, and achieves an optical feedback by the optical circulator for injecting to the resonant cavity, generating a series of tunable laser longitudinal modes with equal frequency space. Meanwhile, in combination with the highly-stable signal source, the error signal processing system and the laser frequency modulation device, a laser frequency lock is achieved, and the laser frequency comb is generated. The invention obtains a repetition frequency-tunable laser frequency comb with a simple and practical method, having an extensive application prospect and huge application value in fields such as optical fiber sensing and spectroscopy of atom and molecule.