Laser annealing apparatus includes a plurality of frequency-tripled solid-state lasers, each delivering an output beam of radiation at a wavelength between 340 nm and 360 nm. Each output beam has a beam-quality factor (M.sup.2) greater of than 50 in one transverse axis and greater than 20 in another transverse axis. The output beams are combined and formed into a line-beam that is projected on a substrate being annealed. Each output beam contributes to the length of the line-beam.

An ultraviolet laser apparatus includes: a semiconductor laser that emits an excitation laser light; a fiber laser medium to which the excitation laser light enters from the semiconductor laser and that causes laser oscillation; and an external resonator that: converts a wavelength of a laser light oscillated in the fiber laser medium, and outputs an ultraviolet region continuous wave of at least 0.1W.

An ultraviolet laser apparatus includes: a semiconductor laser that emits an excitation laser light; a fiber laser medium to which the excitation laser light enters from the semiconductor laser and that causes laser oscillation; and an external resonator that: converts a wavelength of a laser light oscillated in the fiber laser medium, and outputs an ultraviolet region continuous wave of at least 0.1W.

A kind of all-solid-state high-power slab laser based on phonon band-edge emission, which is comprised of a pumping source, a focusing system, a resonant cavity and a self-frequency-doubling crystal; the said self-frequency-doubling crystal is a Yb-doped RECOB crystal cut into slab shape along the direction of the crystal's maximum effective nonlinear coefficient of its non-principal plane; by changing the cutting direction of the crystal, the phase matching of different wavelengths is realized, thus realizing laser output at the band of 560-600 nm; the said pumping source is a diode laser matrix with a wavelength of 880 nm-980 nm; the input cavity mirror and the output cavity mirror are coated with films to obtain laser output at the band of 560-600 nm; the two large faces of the said self-frequency-doubling crystal is cooled by heat sink and located between the input cavity mirror and the output cavity mirror.

A class of erbium-doped silicate crystals have a general chemical formula of (Er.sub.xYb.sub.yCe.sub.zA.sub.(1-x-y-z)).sub.3RM.sub.3Si.sub.2O.sub.14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 μm continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.

A photonic, integrated circuit chip can have a frequency comb laser configured to generate a plurality of wavelengths, a plurality of modulators, one respective modulator for each wavelength of the plurality of wavelengths, the plurality of modulators being aligned in series with each of the plurality of modulators being tuned to a respective one of the wavelengths of the plurality of wavelengths, a connector configured to convey a drive signal for each modulator of the plurality of modulators, a semiconductor optical amplifier configured to receive light exiting from the plurality of modulators, and a chip having present thereon the frequency comb laser, the plurality of modulators, and the semiconductor optical amplifier. The plurality of modulators can be configured to produce a single beam of time-interleaved, multiple-wavelength output laser light. A mobile system, such as a satellite, can also have the photonic, integrated circuit chip as a component thereof.

A photonic, integrated circuit chip can have a frequency comb laser configured to generate a plurality of wavelengths, a plurality of modulators, one respective modulator for each wavelength of the plurality of wavelengths, the plurality of modulators being aligned in series with each of the plurality of modulators being tuned to a respective one of the wavelengths of the plurality of wavelengths, a connector configured to convey a drive signal for each modulator of the plurality of modulators, a semiconductor optical amplifier configured to receive light exiting from the plurality of modulators, and a chip having present thereon the frequency comb laser, the plurality of modulators, and the semiconductor optical amplifier. The plurality of modulators can be configured to produce a single beam of time-interleaved, multiple-wavelength output laser light. A mobile system, such as a satellite, can also have the photonic, integrated circuit chip as a component thereof.

The invention discloses a Raman laser apparatus including a linear cavity having a first direction and a second direction opposite to the first direction, the linear cavity including along the first direction: a first optical component, a gain medium, a Raman medium, a lithium triborate (LBO) crystal and a second optical component. The first optical component receives an incident pumping light in the first direction. The gain medium receives the pumping light from the first optical component, and generates a first infrared base laser having a first wavelength. The Raman medium receives the first infrared base laser, and generates a second infrared base laser having a second wavelength. The LBO crystal receives the first and the second infrared base lasers, and generates a visible laser light having a third wavelength. The second optical component is configured to allow the visible laser light to be transmitted out along the first direction.

The invention discloses a Raman laser apparatus including a linear cavity having a first direction and a second direction opposite to the first direction, the linear cavity including along the first direction: a first optical component, a gain medium, a Raman medium, a lithium triborate (LBO) crystal and a second optical component. The first optical component receives an incident pumping light in the first direction. The gain medium receives the pumping light from the first optical component, and generates a first infrared base laser having a first wavelength. The Raman medium receives the first infrared base laser, and generates a second infrared base laser having a second wavelength. The LBO crystal receives the first and the second infrared base lasers, and generates a visible laser light having a third wavelength. The second optical component is configured to allow the visible laser light to be transmitted out along the first direction.

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.