A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

An intra-cavity doubled OPS-laser has a laser-resonator including a birefringent filter (BRF) for coarse wavelength-selection, and an optically nonlinear (ONL) crystal arranged for type-II frequency-doubling and fine wavelength-selection. Laser-radiation circulates in the laser-resonator at one of a range of fundamental wavelengths dependent on the resonator length. The ONL crystal has a transmission peak-wavelength dependent on the crystal temperature. Reflection of circulating radiation from the BRF is monitored. The reflection is at a minimum when the ONL crystal transmission-peak wavelength is at the circulating radiation wavelength. The temperature of the ONL crystal is selectively varied to maintain the monitored reflection at about a minimum.

An intra-cavity doubled OPS-laser has a laser-resonator including a birefringent filter (BRF) for coarse wavelength-selection, and an optically nonlinear (ONL) crystal arranged for type-II frequency-doubling and fine wavelength-selection. Laser-radiation circulates in the laser-resonator at one of a range of fundamental wavelengths dependent on the resonator length. The ONL crystal has a transmission peak-wavelength dependent on the crystal temperature. Reflection of circulating radiation from the BRF is monitored. The reflection is at a minimum when the ONL crystal transmission-peak wavelength is at the circulating radiation wavelength. The temperature of the ONL crystal is selectively varied to maintain the monitored reflection at about a minimum.

The purpose of the present invention is to make it possible to output stable light by optimizing the wavelength conversion efficiency in a wavelength conversion element without employing an optical detection device such as a photo diode in a laser light source device. A fundamental light wave emitted from a semiconductor laser (2) is wavelength converted by a wavelength conversion element (5) and is emitted therefrom. A lighting circuit (20) supplies electric power for the aforementioned semiconductor laser (2) to turn on the semiconductor laser (2). A control unit (21) controls the operation of the device while controlling the amount of power supplied to a heater means (7) such that the wavelength conversion element (5) reaches a temperature at which optimum wavelength conversion efficiency is acquired. The temperature detected by a temperature detection means (Th1) is input to the control unit (21), and the control unit (21) defines the temperature of the wavelength conversion element (5) at which the maximum amount of power is supplied to the heater means (7) as a set temperature at which the optimum wavelength conversion efficiency is acquired, and performs feedback control of the temperature of the wavelength conversion element (5) so that the temperature of the wavelength conversion element (5) reaches the aforementioned set temperature by controlling the amount of heat supplied from the heater means (7).

The purpose of the present invention is to make it possible to output stable light by optimizing the wavelength conversion efficiency in a wavelength conversion element without employing an optical detection device such as a photo diode in a laser light source device. A fundamental light wave emitted from a semiconductor laser (2) is wavelength converted by a wavelength conversion element (5) and is emitted therefrom. A lighting circuit (20) supplies electric power for the aforementioned semiconductor laser (2) to turn on the semiconductor laser (2). A control unit (21) controls the operation of the device while controlling the amount of power supplied to a heater means (7) such that the wavelength conversion element (5) reaches a temperature at which optimum wavelength conversion efficiency is acquired. The temperature detected by a temperature detection means (Th1) is input to the control unit (21), and the control unit (21) defines the temperature of the wavelength conversion element (5) at which the maximum amount of power is supplied to the heater means (7) as a set temperature at which the optimum wavelength conversion efficiency is acquired, and performs feedback control of the temperature of the wavelength conversion element (5) so that the temperature of the wavelength conversion element (5) reaches the aforementioned set temperature by controlling the amount of heat supplied from the heater means (7).

A MOPA laser system that includes a seed laser configured to output pulsed laser light, an amplifier configured to receive and amplify the pulsed laser light emitted by the seed laser; and a pump laser configured to deliver a pump laser beam to both the seed laser and the amplifier.

A MOPA laser system that includes a seed laser configured to output pulsed laser light, an amplifier configured to receive and amplify the pulsed laser light emitted by the seed laser; and a pump laser configured to deliver a pump laser beam to both the seed laser and the amplifier.

A femtosecond laser based laser processing system having a femtosecond laser, frequency conversion optics, beam manipulation optics, target motion control, processing chamber, diagnostic systems and system control modules. The femtosecond laser based laser processing system allows for the utilization of the unique heat control in micromachining, and the system has greater output beam stability, continuously variable repetition rate and unique temporal beam shaping capabilities.

A modular, compact and widely tunable laser system for the efficient generation of high peak and high average power ultrashort pulses. Peak power handling capability of fiber amplifiers is expanded by using optimized pulse shapes, as well as dispersively broadened pulses. Dispersive pulse stretching in the presence of self-phase modulation and gain results in the formation of high-power parabolic pulses. To ensure a wide tunability of the whole system, Raman-shifting of the compact sources of ultrashort pulses in conjunction with frequency-conversion in nonlinear optical crystals can be implemented, or an Anti-Stokes fiber in conjunction with fiber amplifiers and Raman-shifters are used. Positive dispersion optical amplifiers are used to improve transmission characteristics. An optical communication system utilizes a Raman amplifier fiber pumped by a train of Raman-shifted, wavelength-tunable pump pulses, to thereby amplify an optical signal which counterpropagates within the Raman amplifier fiber with respect to the pump pulses.

The present application discloses a nonlinear optical crystal material, preparation method and application of the nonlinear optical crystal material. The nonlinear optical crystal material has an excellent infrared nonlinear optical performance, whose frequency-doubling intensity can reach 9.3 times of AgGaS.sub.2 with the same particle size, and it meets type-I phase matching; and its laser damage threshold can reach 7.5 times of AgGaS.sub.2 with the same particle size. The nonlinear optical crystal material has important application value in the frequency-converters which can be used for frequency doubling, sum frequency, difference frequency, optical parametric oscillation of laser in mid and far infrared waveband, and the like.