H01S3/117

ACOUSTO-OPTIC Q SWITCH, RESONANT CAVITY AND PULSE LASER DEVICE FOR IMPROVING LASER DEVICE POWER

An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

ACOUSTO-OPTIC Q SWITCH, RESONANT CAVITY AND PULSE LASER DEVICE FOR IMPROVING LASER DEVICE POWER

An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Q-SWITCHED LASER SYSTEM

A laser system, comprising: a laser cavity, a gain medium positioned within the laser cavity, a pump source optically coupled to the gain medium, an input minor positioned at a first end of the laser cavity, an output coupler positioned at a second end of the laser cavity, a first etalon positioned within the laser cavity, and a q-switching element positioned within the laser cavity, wherein the laser system is configured to provide a laser beam at a selected wavelength ranging of 1700 to 3000 nm with a tunable spectral range of at least 10 nm. A method for using the laser system e.g., for producing a pulsed laser beam is further disclosed.

Q-SWITCHED LASER SYSTEM

A laser system, comprising: a laser cavity, a gain medium positioned within the laser cavity, a pump source optically coupled to the gain medium, an input minor positioned at a first end of the laser cavity, an output coupler positioned at a second end of the laser cavity, a first etalon positioned within the laser cavity, and a q-switching element positioned within the laser cavity, wherein the laser system is configured to provide a laser beam at a selected wavelength ranging of 1700 to 3000 nm with a tunable spectral range of at least 10 nm. A method for using the laser system e.g., for producing a pulsed laser beam is further disclosed.

Acousto-optic Q switch, resonant cavity and pulse laser device for improving laser device power

An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Acousto-optic Q switch, resonant cavity and pulse laser device for improving laser device power

An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Use of class of quaternary molybdenum/tungsten tellurate crystals, and device

The present disclosure relates to use of a quaternary molybdenum/tungsten tellurite crystal and a device thereof. The quaternary molybdenum/tungsten tellurite crystal is used as an acousto-optic material, wherein the quaternary molybdenum/tungsten tellurite comprises tellurium (Te) and tungsten (W), or tellurium (Te) and molybdenum (Mo). The crystal has abundant kinds, is non-toxic, and includes high, medium and low symmetry crystal systems; it easily produces a large-size and high-quality single crystal and almost meets all requirements of excellent acousto-optic properties. In the present disclosure, by selecting different light transmission directions and excitation source directions to fabricate an acousto-optic device with practical application values according to the requirements of the crystal acousto-optic device and the crystal characteristics, high-performance acousto-optic Q switching laser output is achieved.

Passively cavity-dumped laser apparatus, system and methods

Systems and methods for employing an electro-optic and photoconductive optical element operating in combination with a polarizer and 100% reflective mirrors to passively control dumping of power from a resonator. The optical element may be constructed of electro-optic material (e.g., Bismuth Silicon Oxide (BSO), Bismuth Germanium Oxide (BGO)), the refractive index of which may be altered by the application of an externally applied electric field. The presence of incident light changes the photoconductivity of the optical element and, therefore, also changes the polarization state of the light passing through the optical element. When combined with a conventional polarizer, the device acts as a self-triggering optical valve to suddenly divert the path of light within a laser to outside of the normal resonator path. Optical power that has been stored inside the laser resonator is then dumped out of the laser in a single, very-high power pulse.

Passively cavity-dumped laser apparatus, system and methods

Systems and methods for employing an electro-optic and photoconductive optical element operating in combination with a polarizer and 100% reflective mirrors to passively control dumping of power from a resonator. The optical element may be constructed of electro-optic material (e.g., Bismuth Silicon Oxide (BSO), Bismuth Germanium Oxide (BGO)), the refractive index of which may be altered by the application of an externally applied electric field. The presence of incident light changes the photoconductivity of the optical element and, therefore, also changes the polarization state of the light passing through the optical element. When combined with a conventional polarizer, the device acts as a self-triggering optical valve to suddenly divert the path of light within a laser to outside of the normal resonator path. Optical power that has been stored inside the laser resonator is then dumped out of the laser in a single, very-high power pulse.

Long wavelength infrared detection and imaging with long wavelength infrared source

An infrared detection system comprises the following elements. A laser source provides radiation for illuminating a target (5). This radiation is tuned to at least one wavelength in the fingerprint region of the infrared spectrum. A detector (32) detects radiation backscattered from the target (5). An analyser determines from at least the presence or absence of detected signal in said at least one wavelength whether a predetermined volatile compound is present. An associated detection method is also provided. In embodiments, the laser source is tunable over a plurality of wavelengths, and the detector comprises a hyperspectral imaging system. The laser source may be an optical parametric device has a laser gain medium for generating a pump beam in a pump laser cavity, a pump laser source and a nonlinear medium comprising a ZnGeP.sub.2 (ZGP) crystal. On stimulation by the pump beam, the ZnGeP.sub.2 (ZGP) crystal is adapted to generate a signal beam having a wavelength in a fingerprint region of the spectrum and an idler beam having a wavelength in the mid-infrared region of the spectrum. The laser gain medium and the ZnGeP.sub.2 (ZGP) crystal are located in the pump wave cavity.