Patent classifications
H01S3/176
Integration of Erbium-Doped Low Loss Silicon Nitride Waveguides on Silicon Photonics
In various embodiments, the disclosure relates to an electro-optical device that includes an optical amplifier and a photonic assembly. The optical amplifier may include a first encapsulation layer defining a first bonding surface, and an erbium-doped Si.sub.3N.sub.4 waveguide, wherein the erbium-doped Si.sub.3N.sub.4 waveguide disposed within the first encapsulation layer. The photonic assembly may include a substrate, a second encapsulation layer defining a second bonding surface, the second encapsulation layer disposed on the substrate, a modulator, one or more photodetectors, and a waveguide. In various embodiments, the modulator, the one or more photodetectors and the waveguide are disposed within the second encapsulation layer. The one or more regions of the first bonding surface are bonded to the one or more regions of the second bonding surface in various embodiments. The Si.sub.3N.sub.4 waveguide is optically coupled to the waveguide in various embodiments.