Patent classifications
H01S3/2232
LINE NARROWING MODULE, GAS LASER APPARATUS, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICES
A line narrowing module includes an enclosure, a prism which is disposed in an internal space of the enclosure and through which light passes, a mounter which is disposed in the internal space and on which the prism is mounted, a fixing unit which is disposed in the internal space and fixes the prism to the mounter, and a light blocking member. The light blocking member is disposed in the internal space and blocks scattered light in the internal space, the scattered light produced from the light and traveling to the fixing unit.
EUV LPP source with dose control and laser stabilization using variable width laser pulses
A method and apparatus for control of a dose of extreme ultraviolet (EUV) radiation generated by a laser produced plasma (LPP) EUV light source. Each laser pulse is modulated to be of a width that is determined to be sufficient to allow for extraction of a suitable uniform amount of energy in the laser source gain medium; in some embodiments the suitable uniform amount of energy to be extracted may be selected to avoid self-lasing. The EUV energy created by each pulse is measured and total EUV energy created by the fired pulses determined, and a desired energy for the next pulse is determined based upon whether the total EUV energy is greater or less than a desired average EUV energy times the number of pulses. The energy of the next pulse is modulated, either by modulating its magnitude or by modulating the amplification of the pulse by one or more amplifiers, but without decreasing the determined width of the laser pulse.
Radio Frequency Slab Laser
A radio frequency, RF, slab laser comprising a live electrode (102) and a ground electrode (108) whose inwardly facing surfaces face each other to form a gap for forming a plasma discharge when the live electrode is supplied with a suitable RF drive signal. The electrodes are enclosed in a vacuum space by a vacuum housing (114) with an access aperture (116). The access aperture is sealed with a vacuum flange (70) that comprises an electrically insulating connector. A plurality of hollow conductors (62) are arranged to extend through the vacuum flange into the vacuum space and connect with the live electrode. The hollow conductors connect to the live electrode to supply it with its RF drive signal and also coolant fluid which is distributed through fluid circulation channels (80a, 80b). Coolant fluid is supplied to the live electrode through certain ones of the hollow conductors and taken out by others.
Protecting a vacuum environment from leakage
Methods, devices, and systems for protecting a vacuum environment from leakage are provided. The devices include an optical component for gas-tight closure of the vacuum environment, a retention device configured to retain the optical component and including a cooling region separated from the vacuum environment in a gas-tight manner and configured to receive a cooling medium to cool the optical component, a first part-region of the optical component being arranged in the cooling region, and a reduced-pressure region configured to have a reduced pressure and separated in a gas-tight manner from the vacuum environment and from the cooling region, a second part-region of the optical component being arranged in the reduced-pressure region, and a detector configured to detect a leakage in the optical component when the cooling medium flows from the cooling region into at least one of the reduced-pressure region or the vacuum environment.
Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same
A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.
Q-SWITCHED CO2-LASER MATERIAL MACHINING SYSTEM COMPRISING ACOUSTO-OPTIC MODULATORS
A Q-switched CO2 laser material processing system with acousto-optic modulators (AOM) is employed, on the one hand, inside the resonator for Q-switching the CO2 laser and, on the other hand, externally for efficient suppression of the radiation feedback between a laser and workpiece. The frequency shift of the radiation diffracted at the AOM is taken into account which exactly corresponds to the excitation frequency of the acoustic wave in the AOM crystal under the aspect of the amplification of the radiation in the active medium. Since this frequency shift significantly reduces the amplification of the radiation, it has to be avoided in the Q-switching process, which is achieved, by means of a tandem of two AOMs with identical excitation frequencies but with the acoustic waves propagating in opposite directions in the crystal. The frequency shift advantageously suppresses radiation feedback between the laser and workpiece.
WINDOW FOR SURGICAL LASER
A laminated laser window having an inner layer transparent to light having wavelengths between 3.5 micrometers and 12 micrometers and having as an outer surface a nanometric-thick outer layer of SiO2. The window allows the passage of light within this wavelength range, for example from a CO2 laser. In The SiO2 outer layer maintains biocompatibility when used in laser devices for insertion into externally accessible bodily cavities.
Sensor system
A system, comprising an optical component that, in operational use of the optical component, optically interacts with a laser beam, an electrically conductive element disposed on or within the optical component that, in operational use of the optical component, is exposed to the laser beam, and a monitoring system operative to monitor a physical quantity representative of an electrical resistance of the electrically conductive element and to determine based on the physical quantity, a position of the laser beam relative to the optical component.
SYSTEM AND METHOD FOR FREQUENCY MATCHING A RESONANCE CAVITY TO A LIGHT SOURCE
A method and system for frequency matching a resonant cavity is disclosed. Light is received in a resonant cavity having at least a first mirror and a second mirror defining a path along which light is reflected. At least the second mirror is actuatable to vary the length of the path of the resonant cavity. An intensity of the light exiting or reflecting from the resonant cavity is monitored, and an error correction is determined. The second mirror is actuated towards a pose relative to the first mirror at which a frequency of the light is in resonance with the length of the path. In this manner, the resonant cavity is frequency matched to the light to maintain the resonant cavity in resonance.
EUV LPP source with improved dose control by combining pulse modulation and pulse control mode
A method and apparatus for control of a dose of extreme ultraviolet (EUV) radiation generated by a laser produced plasma (LPP) EUV light source that combines pulse control mode and pulse modulation. The EUV energy created by each pulse is measured and total EUV energy created by the fired pulses determined, a desired energy for the next pulse is determined based upon whether the total EUV energy is greater or less than a desired average EUV energy times the number of pulses. If the desired pulse energy for the next droplet is within the range of one or more pulse modulation actuators, the pulse is modulated; otherwise, the pulse is fired to miss the droplet. This provides greater control of the accumulated dose as well as uniformity of the EUV energy over time, greater ability to compensate for pulses that generate EUV energy that is higher or lower than nominal expected values, and ability to provide an average EUV energy per pulse that is less than the nominal minimum EUV energy per pulse of the system.