A method and apparatus for inscribing a high-temperature stable Bragg grating in an optical waveguide, comprising the steps of: providing the optical waveguide; providing electromagnetic radiation from an ultrashort pulse duration laser, wherein the wavelength of the electromagnetic radiation has a characteristic wavelength in the wavelength range from 150 nanometers (nm) to 2.0 micrometers (m); providing cylindrical focusing optics; providing a diffractive optical element that when exposed to the focused ultrashort laser pulse, creates an interference pattern on the optical waveguide, wherein the irradiation step comprises irradiating a surface of the diffractive optical element with the focused electromagnetic radiation, the electromagnetic radiation incident on the optical waveguide, from the diffractive optical element, being sufficiently intensive to cause permanent (Type II) change in the index of refraction within multiple Bragg grating planes in the core of the optical waveguide resulting from at least one micropore.

Disclosed are a thin-disk regenerative amplifier and an amplification method. The thin-disk regenerative amplifier includes an input and output light path and an amplification light path. A seed laser is input into the thin-disk regenerative amplifier through the input and output light path, and reflected and amplified by the amplification optical path to obtain an amplified laser. After reaching a predetermined threshold, the amplified laser is output through the input and output light path. The input and output optical path includes an optical isolator, a first polarization beam splitter, an optical rotator, a second polarization beam splitter, a first reflective mirror, and a second reflective mirror. The amplification light path includes an input mirror, a thin-disk crystal, a pumping device, a first concave reflective mirror, and a second concave reflective mirror.

An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm.sup.2 and equal to or lower than a fluence of the main pulse laser beam.

A laser device is a laser device that includes an output unit that outputs seed light to a light amplifying unit. The output unit has a light source unit that outputs, as the seed light, rays of light with a plurality of wavelengths lying within a gain range of the light amplifying unit, and a seed light control unit that controls an intensity-time waveform of the seed light output from the light source unit.

Wavelength-tunable source of pulsed laser radiation for VIS-NIR spectroscopy which consists of a pump source (1) forming bursts of picosecond pulses of high pulse repetition rate, and a synchronously pumped optical parametric oscillator (2). The pump source (1) comprises a solid-state regenerative amplifier (31) having one or two electro-optical switches (32,33) inside its resonator (44). The switches create partial transmission of the resonator for a time interval longer than a resonator roundtrip time, and eject a part of energy of a pulse circulating inside. Bursts of 5-10 ns duration are formed, which are filled with high peak power picosecond pulses. Pulse repetition rate of the order of GHz of pump pulses allows the construction of a compact optical parametric oscillator. The whole set of parameters ensures high energy efficiency, stability and an ability to provide output pulse bursts repeating at up to 10 kHz repetition rate.

A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

A method and a device for generating a series of laser pulses in a laser device, particularly single and multiple bursts of pulses with a minimum temporal distance between the pulses in a single burst in the picosecond domain. The device includes at least a master oscillator and a regenerative amplifier. The method includes steps of injecting a laser pulse from the master oscillator into the regenerative amplifier, amplifying injected pulse burst during multiple round-trips in an optical cavity of the regenerative amplifier, ejecting amplified pulse burst from the cavity of the regenerative amplifier. The injection step involves applying a first intermediate voltage to an optical switch for a time span, during which pulses from the oscillator are injected into the amplifier, forming a burst of injected seed pulses, which are further amplified in the amplification step, in which the optical switch voltage is set to a locking voltage.

An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm.sup.2 and equal to or lower than a fluence of the main pulse laser beam.

Laser-apparatus includes a fiber-MOPA arranged to deliver amplified seed optical pulses having a wavelength of about 1043 nanometers to a multi-pass ytterbium-doped yttrium aluminum garnet solid-state optical amplifier for further amplification.

Direct diode-pumped Ti:sapphire laser amplifiers use fiber-coupled laser diodes as pump beam sources. The pump beam may be polarized or non-polarized. Light at wavelengths below 527 nm may be used in cryogenic configurations. Multiple diode outputs may be polarization or spectrally combined.