Patent classifications
H01S5/02234
Thermoelectric cooler built-in stem
Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.
Thermoelectric cooler built-in stem
Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.
Semiconductor laser
A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.
SEMICONDUCTOR CONTINUOUS ARRAY LAYER
Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.
Wafer level optic and zoned wafer
A plurality of light sources such as vertical-cavity surface-emitting lasers (VCSELs) are configured to emit non-visible light through emission apertures. Optics are formed over the emission apertures of the plurality of light sources. The optics may provide different tilt angles or divergence angles to the non-visible light emitted by the light sources in the plurality of light sources.
METHOD FOR MANUFACTURING DIFFUSION COVER, DIFFUSION COVER, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE COMPRISING SAME
The present disclosure provides a method for manufacturing a diffusion cover that diffuses and transmits light from a semiconductor light-emitting element. The method includes the steps of preparing a base member having an obverse surface and a reverse surface that face away from each other in a thickness direction; forming a lens material on the obverse surface, the lens material containing a photosensitive transparent resin; and removing a portion of the lens material by performing grayscale exposure and development, and forming a lens having a plurality of lens members. Such a configuration can provide a diffusion cover suitable for reducing the manufacturing cost.
Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition
A surface mountable laser driver circuit package is configured to mount on a host printed circuit board (PCB). A surface mount circuit package includes a lead-frame. A plurality of laser driver circuit components is mounted on and in electrical communication with the lead-frame of the surface mount circuit package. A dielectric layer is located between the lead-frame and the host PCB and includes portals through the dielectric layer each arranged to accommodate an electrical connection between the lead-frame and the host PCB. The lead-frame and the dielectric layer are arranged such that a first lead-frame portion and a first dielectric layer portal align with a first end of a host PCB trace configured to provide a current return path for the surface mount laser driver, and a second lead-frame portion and a second dielectric layer portal align with a second end of the host PCB trace.
Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition
A surface mountable laser driver circuit package is configured to mount on a host printed circuit board (PCB). A surface mount circuit package includes a lead-frame. A plurality of laser driver circuit components is mounted on and in electrical communication with the lead-frame of the surface mount circuit package. A dielectric layer is located between the lead-frame and the host PCB and includes portals through the dielectric layer each arranged to accommodate an electrical connection between the lead-frame and the host PCB. The lead-frame and the dielectric layer are arranged such that a first lead-frame portion and a first dielectric layer portal align with a first end of a host PCB trace configured to provide a current return path for the surface mount laser driver, and a second lead-frame portion and a second dielectric layer portal align with a second end of the host PCB trace.
Light-emitting device
A light-emitting device includes: a semiconductor laser element; a package; an optical member fixed to the package; and a first adhesive and a second adhesive fixing the optical member to the package, the second adhesive having a better resistance to light than the first adhesive. The package has an emission surface through which light from the semiconductor laser element exits the package. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to an incidence surface of the optical member than to an emission surface of the optical member. In the optical member, the one or more first bonding regions and the one or more second bonding regions have a light transmittance of 80% or more.
Light-emitting device
A light-emitting device includes: a semiconductor laser element; a package; an optical member fixed to the package; and a first adhesive and a second adhesive fixing the optical member to the package, the second adhesive having a better resistance to light than the first adhesive. The package has an emission surface through which light from the semiconductor laser element exits the package. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to an incidence surface of the optical member than to an emission surface of the optical member. In the optical member, the one or more first bonding regions and the one or more second bonding regions have a light transmittance of 80% or more.