An optical assembly includes an integrated circuit (IC) driver chip; an optical subassembly disposed on the IC driver chip that includes: a vertical cavity surface emitting laser (VCSEL) device, an optical element disposed above a top surface of the VCSEL device, and two or more attachment structures disposed between the VCSEL device and the optical element; and two or more additional attachment structures disposed between the IC driver chip and the optical subassembly. The VCSEL device includes: a cathode contact disposed on the top surface of the VCSEL device, and an anode contact disposed on the top surface of the VCSEL device. The optical element includes two or more conductive traces on a bottom surface of the optical element. The two or more attachment structures are disposed between the two or more conductive traces of the optical element, and the cathode contact and the anode contact of the VCSEL device.

Provided are a subminiature optical transmission module and a method for manufacturing same. The optical transmission module includes: a mold body having a first surface and a second surface opposite to each other; multiple edge-type light emitting elements, each of which is molded inside the mold body by fitting same to the first surface so as to match with the first surface and generates an optical signal in the edge direction of a chip; and an optical component disposed on one side thereof so as to optically multiplex multiple optical signals incident from the multiple edge-type light emitting elements and to output same, wherein the identical height is configured between the surface of each light emitting element and the optical axis of the optical component, and the edge direction of the chip is parallel to the first surface of the mold body.

A semiconductor light-emitting device includes light-emitting element, sealing resin and conductor. The light-emitting element has first and second surfaces spaced apart in a thickness direction with first element electrode on the first surface and with second element electrode on the second surface. The sealing resin covers at least the second surface. The conductor, forming a conduction path to the light-emitting element, includes a first interconnecting portion, an embedded portion, and a second interconnecting portion. The sealing resin has a cavity extending in the thickness direction and connected to the second element electrode. The first interconnecting portion is electrically connected to the first element electrode and extends in a direction crossing the thickness direction. The embedded portion is in the cavity and connected to the second element electrode. The second interconnecting portion is connected to the embedded portion and extends in the direction crossing the thickness direction.

A plurality of light sources such as vertical-cavity surface-emitting lasers (VCSELs) are configured to emit light through emission apertures. The light may be near-infrared light. Optics are formed over the emission apertures of the plurality of light sources. The optics may provide different tilt angles or divergence angles to the non-visible light emitted by the light sources in the plurality of light sources.

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

A VCSEL illuminator module includes a module forming a physical cavity having electrical contacts positioned on an inner surface of the module that feed through the module to electrical contacts positioned on an outer surface of the module. A VCSEL device is positioned on the inner surface module and includes electrical contacts that are electrically connected to the electrical contacts on the inner surface of the module. The VCSEL device generates an optical beam when current is applied to the electrical contacts. An optical element is positioned adjacent to an emitting surface of the VCSEL device and is configured to modify the optical beam generated by the VCSEL device.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.

A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.