In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

An optical module includes: an optical component; a base portion on which the optical component is mounted; a housing that includes sidewalls extending from the base portion in a height direction to surround the base portion; a cover member that defines, along with the housing, an accommodation space in which the optical component is disposed; and a resin for fixing the housing to the cover member. The cover member includes: an opposing surface that faces the base portion of the housing in the height direction; a first lateral cover surface extending along the height direction; and a second lateral cover surface extending in the height direction. The second lateral cover surface is disposed on an opposite side of the first lateral cover surface.

An optical module includes: an optical component; a base portion on which the optical component is mounted; a housing that includes sidewalls extending from the base portion in a height direction to surround the base portion; a cover member that defines, along with the housing, an accommodation space in which the optical component is disposed; and a resin for fixing the housing to the cover member. The cover member includes: an opposing surface that faces the base portion of the housing in the height direction; a first lateral cover surface extending along the height direction; and a second lateral cover surface extending in the height direction. The second lateral cover surface is disposed on an opposite side of the first lateral cover surface.

A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

The present invention is: a curable composition comprising a component (A), a component (B), and a component (C), the curable composition comprising the component (A) and the component (B) in a mass ratio (component (A):component (B)) of 100:0.3 to 100:50, the component (A) being a curable polysilsesquioxane compound that comprises a repeating unit represented by a formula (a-1),

R.sup.1SiO.sub.3/2  (a-1)

wherein R.sup.1 is a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group, the component (B) being fine particles having an average primary particle size of 5 to 40 nm, and the component (C) being a silane coupling agent that comprises an acid anhydride structure in its molecule. This invention provides: a curable composition that produces a cured product that exhibits excellent adhesion, excellent delamination resistance, and excellent heat resistance, and exhibits excellent workability during the application step, a method for producing the same, a cured product obtained by curing the curable composition, a method for using the curable composition as an optical element-securing adhesive or an optical element sealing material, and an optical device.

A packaged electronic device structure includes a substrate having a major surface. A semiconductor device is connected to the major surface of the substrate, the semiconductor device having a first major surface, a second major surface opposite to the first major surface, and a side surface extending between the first major surface and the second major surface. A package body encapsulates a portion of the semiconductor device, wherein the side surface of the semiconductor device is exposed through a side surface of the package body. In some examples, the side surface of the semiconductor device is an active surface. In some examples, the package body comprises a molded structure that contacts and overlaps the first major surface of the semiconductor device.

A packaged electronic device structure includes a substrate having a major surface. A semiconductor device is connected to the major surface of the substrate, the semiconductor device having a first major surface, a second major surface opposite to the first major surface, and a side surface extending between the first major surface and the second major surface. A package body encapsulates a portion of the semiconductor device, wherein the side surface of the semiconductor device is exposed through a side surface of the package body. In some examples, the side surface of the semiconductor device is an active surface. In some examples, the package body comprises a molded structure that contacts and overlaps the first major surface of the semiconductor device.

Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.