In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

A light emitting module includes a light emitting device, a heat dissipating plate, and a holder. The light emitting device has a light extraction window and a plurality of electrodes. The light emitting device is secured to the heat dissipating plate. The heat dissipating plate is secured to the holder. The holder includes a plurality of terminals respectively connected to the electrodes of the light emitting device. The heat dissipating plate includes an exposed portion exposed from the holder when viewed from a side of the light emitting module on which the light extraction window of the light emitting device is provided.

A surface mount laser package for a side-looking semiconductor laser has a substantially planar leadframe with a component side and a board attach side. The component side has a conductive die attach pad and a plurality of wire bond pads. A laser die has an anode surface and a cathode surface, where the cathode surface is mounted to the conductive die attach pad. A plurality of bond wires span between the laser die anode surface and a wire bond pad. A molding encases the laser die and the plurality of bond wired on the component side of the leadframe and also lies between the conductive die attach pad and each of the wire bond pads within a plane of the leadframe. The conductive die attach pad has a metallization layer on the leadframe and each of the bond pads has a metallization layer on the leadframe.

In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

A chip-onboard assembly for a side-looking optical component is mounted on a mounting surface of a printed circuit board (PCB) and includes a window assembly mounted to the PCB. The window assembly includes a glass window and a window holding bracket. The bracket has a first walled portion, a second walled portion attached to the first walled portion, and a third walled portion opposite the second wall portion. The first walled portion further has a cutaway section configured to accommodate the glass window. An optical encapsulant covers the covering the side-looking optical component. The glass window is attached to the side-looking optical component CoB assembly.

A chip-onboard assembly for a side-looking optical component is mounted on a mounting surface of a printed circuit board (PCB) and includes a window assembly mounted to the PCB. The window assembly includes a glass window and a window holding bracket. The bracket has a first walled portion, a second walled portion attached to the first walled portion, and a third walled portion opposite the second wall portion. The first walled portion further has a cutaway section configured to accommodate the glass window. An optical encapsulant covers the covering the side-looking optical component. The glass window is attached to the side-looking optical component CoB assembly.