A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

An optical module includes: an electric circuit board E including an electric circuit provided on a light-permeable resin substrate 1; and an optical element 11 joined onto the electric circuit board E. The optical element 11 is joined to the electric circuit board E, with a light-emitting portion (or light-receiving portion) 11a of the optical element 11 facing an electric circuit surface side of the electric circuit board E. A space between the light-emitting portion (or light-receiving portion) 11a of the optical element 11 and the light-permeable resin substrate 1 is filled with a light-permeable resin cured material X. A relative refractive index difference between the light-permeable resin cured material X and the light-permeable resin substrate 1 is not greater than 20%. This reduces the propagation loss of light with a simple structure.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Apparatuses, systems, and associated methods are described that provide an optical device with sealed optoelectronic component(s) without impacting effective optical performance of the optical device. An example optical device includes a substrate that defines a first surface and a second surface opposite the first surface. The optical device further includes an optoelectronic component supported by the first surface of the substrate where the optoelectronic component operates with optical signals. The optical device further includes a conformal coating applied to the first surface of the substrate such that at least a portion of the conformal coating is disposed on the optoelectronic component. The conformal coating substantially seals the optoelectronic component from an external environment of the optical device without impacting effective optical performance of the optical device. A thickness of the conformal coating may be determined based upon one or more operating parameters of the optoelectronic component.

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

The invention relates to a light emitter unit having at least one VCSEL chip, which light emitter unit comprises: a light exit surface, via which light produced by the VCSEL chip and radiated perpendicularly to the chip plane is emitted into the surroundings; and contacts for supplying the electrical energy required for the production of the light by the VCSEL chip. The described technical solution is characterized in that at least one lateral surface of the VCSEL chip arranged perpendicularly to the chip plane is touched and covered, at least in parts, by a cover element.

The invention relates to a light emitter unit having at least one VCSEL chip, which light emitter unit comprises: a light exit surface, via which light produced by the VCSEL chip and radiated perpendicularly to the chip plane is emitted into the surroundings; and contacts for supplying the electrical energy required for the production of the light by the VCSEL chip. The described technical solution is characterized in that at least one lateral surface of the VCSEL chip arranged perpendicularly to the chip plane is touched and covered, at least in parts, by a cover element.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.