Embodiments are directed to a photonic device that includes a first substrate defining a surface and a trench forming a depression along a portion of the surface, and a second substrate coupled with the surface and extending from the surface to form a raised portion around the trench. The photonic device can also include a laser die positioned within the trench, such that the laser die is surrounded by the second substrate, and an optical material positioned within a region between the laser die and the second substrate. The photonic device can further include a third substrate coupled with the second substrate such that the second substrate is positioned between the first substrate and the third substrate such that the second substrate is configured to at least partially isolate the laser die from mechanical stress exerted on the optical device.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

A packaged electronic device structure includes a substrate having a major surface. A semiconductor device is connected to the major surface of the substrate, the semiconductor device having a first major surface, a second major surface opposite to the first major surface, and a side surface extending between the first major surface and the second major surface. A package body encapsulates a portion of the semiconductor device, wherein the side surface of the semiconductor device is exposed through a side surface of the package body. In some examples, the side surface of the semiconductor device is an active surface. In some examples, the package body comprises a molded structure that contacts and overlaps the first major surface of the semiconductor device.

A packaged electronic device structure includes a substrate having a major surface. A semiconductor device is connected to the major surface of the substrate, the semiconductor device having a first major surface, a second major surface opposite to the first major surface, and a side surface extending between the first major surface and the second major surface. A package body encapsulates a portion of the semiconductor device, wherein the side surface of the semiconductor device is exposed through a side surface of the package body. In some examples, the side surface of the semiconductor device is an active surface. In some examples, the package body comprises a molded structure that contacts and overlaps the first major surface of the semiconductor device.

In an embodiment an optoelectronic component includes an optoelectronic semiconductor chip, an optical element and a chip carrier, wherein the semiconductor chip is arranged on the chip carrier, wherein the optical element is arranged downstream of the semiconductor chip in a radiation direction and is attached to an optic carrier by an adhesive layer, wherein a potting forms a frame around the optical element, the optic carrier and the adhesive layer which extends from the optical element to the optic carrier, wherein the potting fixes the optical element in its position relative to the semiconductor chip, wherein the optic carrier and the chip carrier are one piece, and wherein the optic carrier at least partially surrounds the semiconductor chip laterally as seen in the radiation direction.

An electronic element housing package includes a base and a lead frame. The base is made of resin. The lead frame includes a portion positioned inside the base and another portion exposed from the base. The base includes a recess including a step portion. The lead frame includes a lead surface, a first extension portion, and a second extension portion. The lead surface is exposed at the step portion and has a first side and a second side. The first extension portion extends outward from the lead surface beyond the first side. The first extension portion is positioned inside the base. The second extension portion extends outward from the lead surface beyond the second side. The second extension portion is positioned inside the base. The first side and the second side are two sides not facing one another.

In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.