The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

A light emitting device includes: a lens member having at least one lens surface; a submount; and a plurality of light emitting elements arranged in a row on an upper face of the submount, including a first light emitting element configured to emit first light having an emission peak at a first wavelength and a second light emitting element configured to emit second light having an emission peak at a second wavelength from a second light emission point, the second wavelength being different from the first wavelength, and the second light emission point being located farther from the lens member than a first plane that is perpendicular to an optical axis of the lens surface and that passes through the first light emission point.

A plurality of light sources such as vertical-cavity surface-emitting lasers (VCSELs) are configured to emit light through emission apertures. The light may be near-infrared light. Optics are formed over the emission apertures of the plurality of light sources. The optics may provide different tilt angles or divergence angles to the non-visible light emitted by the light sources in the plurality of light sources.

In one example, a laser assembly may include a substrate, a lens array, and a laser array. The lens array may be positioned on a first side of the substrate. The laser array may be positioned on a second side of the substrate opposite the first side. Lasers of the laser array may be oriented to generate optical signals through the substrate to corresponding lenses of the lens array. The lens array may include at least one concave lens and at least one convex lens. The concave and convex lenses may map the irradiance of the lasers to a common target irradiance profile, resulting in an alignment tolerant laser assembly.

In one example, a laser assembly may include a substrate, a lens array, and a laser array. The lens array may be positioned on a first side of the substrate. The laser array may be positioned on a second side of the substrate opposite the first side. Lasers of the laser array may be oriented to generate optical signals through the substrate to corresponding lenses of the lens array. The lens array may include at least one concave lens and at least one convex lens. The concave and convex lenses may map the irradiance of the lasers to a common target irradiance profile, resulting in an alignment tolerant laser assembly.

There is provided a low-cost lighting optical system not requiring the refractive element for each laser chip.

A lighting optical system includes: a light source including a plurality of multi-emitter laser chips arrayed in a first direction that intersects a light output direction, the plurality of multi-emitter laser chips each having a first emitter outputting first emitter light and a second emitter outputting second emitter light; a plurality of convex lenses each having a center between the first emitter and the second emitter of each of the multi-emitter laser chips, the plurality of convex lenses each arranged in close proximity to a corresponding one of the multi-emitter laser chips; and a first refractive element arranged on light output direction side with respect to the plurality of convex lenses, the first refractive element having a first surface receiving two or more first emitter lights output from the plurality of multi-emitter laser chips and a second surface receiving two or more second emitter lights output from the plurality of multi-emitter laser chips, the first refractive element turning the first emitter lights and the second emitter lights into approximately parallel lights.

A light-emitting device includes semiconductor laser elements including first color-light-emitting laser elements that emit red light, arrayed in a matrix of M rows and N columns (where M≥2 and N≥3). The first color-light-emitting laser elements include two or more first semiconductor laser elements each having an emission peak wavelength of smaller than 647 nm±2 nm, two or more second semiconductor laser elements each having an emission peak wavelength of smaller than 643 nm±2 nm, and two or more third semiconductor laser elements each having an emission peak wavelength of smaller than 639 nm±2 nm. In the M rows and the N columns, in whole or in part, a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements.

A wiring board includes: an insulating member having a first upper surface, and a second upper surface located higher than the first upper surface; and a first wiring layer located on the first upper surface. The first upper surface has a wiring region that does not overlap with the second upper surface in a top view, and that is located in an exposed region. The first wiring layer extends from the wiring region to a connecting region that is connected to the wiring region, that overlaps with the second upper surface in a top view, and that is not exposed. The first wiring layer comprises a first pad portion located in the wiring region, and a first pattern portion located in the connecting region.

An airport runway approach lighting apparatus is disclosed. According to one embodiment. the airport runway approach light includes a visible light source configured to emit a visible light brain and an infrared light source configured to emit an infrared beam. A first lens is attached to the visible light source to change the visible light beam emitted from the visible light source to a desired visible light beam pattern. The infrared light source includes a plurality of semiconductor laser diodes distributed on a surface of a laser diode chip in an array.