An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.

A light emitting device includes: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base, the first light reflecting member having a first light reflecting face including a plane configured to reflect the first light; a second semiconductor laser element disposed on an upper surface of the base and configured to emit second light; a second light reflecting member disposed on the upper surface of the base, the second light reflecting member having a second light reflecting face including a plane configured to reflect the second light; and a phosphor member onto which the first light reflected from the first light reflecting member and the second light reflected from the second light reflecting member are irradiated.

A light emitting device includes: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base, the first light reflecting member having a first light reflecting face including a plane configured to reflect the first light; a second semiconductor laser element disposed on an upper surface of the base and configured to emit second light; a second light reflecting member disposed on the upper surface of the base, the second light reflecting member having a second light reflecting face including a plane configured to reflect the second light; and a phosphor member onto which the first light reflected from the first light reflecting member and the second light reflected from the second light reflecting member are irradiated.

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

A laser projection module is provided. The laser projection module includes a substrate assembly, a lens barrel assembly, a light source, a diffractive optical element and a collimation element. The lens barrel assembly includes a lens barrel and a stop member connected to the lens barrel. The lens barrel is disposed on the substrate assembly and configured to define a receiving cavity together with the substrate assembly. The light source is disposed on the substrate assembly, accommodated in the receiving cavity, and configured to emit laser to the receiving cavity. The diffractive optical element and the collimation element are accommodated in the receiving cavity. The light source, the collimation element and the diffractive optical element are sequentially disposed in an optical path of the light source. The stop member is configured to prevent the diffractive optical element from moving in a light-emitting direction of the laser projection module.

The present disclosure provides an optical member for use in a laser module that includes a surface emitting laser, the optical member being capable of detecting damage (cracking, peeling, and the like), a method for manufacturing the optical member, a laser module including the optical member, and a laser device.

A circuit (e.g., for use in a time-of-flight camera projector module) may include a top metal layer having an anode and a cathode, one or more capacitors connected to the anode, a vertical-cavity surface-emitting laser connected to the anode and the cathode, and a driver connected to the cathode. The circuit may further include a bottom metal layer connected to ground and arranged below the top metal layer, and a dielectric layer separating the top metal layer and the bottom metal layer. In some implementations, the dielectric layer has a thickness under sixty micrometers and a thermal resistance under fifteen degrees Celsius per watt. Accordingly, a current loop flowing vertically across the dielectric layer has a low self-inductance based on the thickness of the dielectric layer and the bottom metal layer is arranged to dissipate heat generated by the current loop flowing vertically across the dielectric layer.

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.