H01S5/0231

OPTICAL MODULE AND MANUFACTURING METHOD OF THE SAME

An optical module includes a circuit board having a through hole for the lead terminal, a signal wiring connected to the lead terminal, a ground layer providing a reference potential, an opening through which the ground layer is exposed, and a bonding material connecting the ground layer to the metallic base. The lead terminal extends in a first direction, and the circuit board and the signal wiring extend in a second direction. When the circuit board is viewed from the first direction, the opening overlaps with the signal wiring, or when the opening does not overlap with the signal wiring, a first distance between the signal wiring and a closest point of the opening to the signal wiring is smaller than a second distance between the closest point and an edge of the circuit board.

OPTICAL TRANSMISSION MODULE
20220344895 · 2022-10-27 · ·

This optical transmission module includes: a plurality of semiconductor lasers provided on a sub-mount fixed to a side surface of a block fixed on a plate-shaped stem made of metal; and a cap with a lens fixed thereto, the cap covering all members placed above the stem. The same number of lead pins as the semiconductor lasers are provided so as to respectively penetrate through a plurality of holes formed in the stem. The lead pins and the semiconductor lasers are electrically connected to each other, respectively. Single-phase electrical signals with the stem as a ground potential are respectively applied to the semiconductor lasers from an external power supply, through the lead pins, respectively, so as to cause modulation and oscillation of the semiconductor lasers.

OPTICAL TRANSMISSION MODULE
20220344895 · 2022-10-27 · ·

This optical transmission module includes: a plurality of semiconductor lasers provided on a sub-mount fixed to a side surface of a block fixed on a plate-shaped stem made of metal; and a cap with a lens fixed thereto, the cap covering all members placed above the stem. The same number of lead pins as the semiconductor lasers are provided so as to respectively penetrate through a plurality of holes formed in the stem. The lead pins and the semiconductor lasers are electrically connected to each other, respectively. Single-phase electrical signals with the stem as a ground potential are respectively applied to the semiconductor lasers from an external power supply, through the lead pins, respectively, so as to cause modulation and oscillation of the semiconductor lasers.

Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition

A surface mountable laser driver circuit package is configured to mount on a host printed circuit board (PCB). A surface mount circuit package includes a lead-frame. A plurality of laser driver circuit components is mounted on and in electrical communication with the lead-frame of the surface mount circuit package. A dielectric layer is located between the lead-frame and the host PCB and includes portals through the dielectric layer each arranged to accommodate an electrical connection between the lead-frame and the host PCB. The lead-frame and the dielectric layer are arranged such that a first lead-frame portion and a first dielectric layer portal align with a first end of a host PCB trace configured to provide a current return path for the surface mount laser driver, and a second lead-frame portion and a second dielectric layer portal align with a second end of the host PCB trace.

Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition

A surface mountable laser driver circuit package is configured to mount on a host printed circuit board (PCB). A surface mount circuit package includes a lead-frame. A plurality of laser driver circuit components is mounted on and in electrical communication with the lead-frame of the surface mount circuit package. A dielectric layer is located between the lead-frame and the host PCB and includes portals through the dielectric layer each arranged to accommodate an electrical connection between the lead-frame and the host PCB. The lead-frame and the dielectric layer are arranged such that a first lead-frame portion and a first dielectric layer portal align with a first end of a host PCB trace configured to provide a current return path for the surface mount laser driver, and a second lead-frame portion and a second dielectric layer portal align with a second end of the host PCB trace.

OPTICAL EMITTING DEVICE WITH BUILT-IN THERMOELECTRIC COOLER AND OPTICAL TRANSCEIVER MODULE HAVING THE SAME
20220329323 · 2022-10-13 ·

An optical emitting device includes a base, a thermoelectric cooler, an optical communication assembly and a circuit board. The base includes a main body and a stem connected with each other. The stem extends from a basal surface of the main body, and a normal of a supporting surface of the stem is non-parallel to a normal of the basal surface of the main body. The thermoelectric cooler is disposed on the supporting surface of the stem. The optical communication assembly is disposed on the thermoelectric cooler, and the thermoelectric cooler is between the optical communication assembly and the stem. The circuit board is disposed on the base and passes through the main body and electrically connected with the optical communication assembly.

HOUSING, OPTIONALLY A TRANSISTOR OUTLINE HOUSING, SOCKET FOR HOUSING, AND ASSEMBLY INCLUDING SUCH A HOUSING AND/OR SOCKET
20230155345 · 2023-05-18 · ·

A socket for an electronic component includes: an electrically insulating material; a base body including at least one opening configured for accommodating an electrically conductive pin configured for being electrically connected to the electronic component, the at least one opening being sealed with the electrically insulating material such that the electrically conductive pin is fed through the at least one opening while being electrically insulated from the base body; and a shell part including a pedestal configured for accommodating the electronic component, at least the shell part of the socket including a metal with a thermal conductivity of at least 100 W/mK.

Optical module

The first capacitor is opposed to and electrically connected to the first back electrode. The second capacitor is opposed to and electrically connected to the second back electrode. Each of the first circuit and the second circuit has a main region that overlaps with a corresponding one of the first capacitor and the second capacitor. At least one circuit of the first circuit and the second circuit has an extension region extending from the main region toward another circuit of the first circuit and the second circuit. At least one of one of the pair of first wires and the second wire is bonded to the extension region.

Quad flat no-leads package for side emitting laser diode
11264778 · 2022-03-01 · ·

A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.

Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same
11264546 · 2022-03-01 · ·

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.