Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

A heat dissipation base is suitable for a transistor outline packaged laser diode. The heat dissipation base includes a basal wall and a heat dissipation wall extending outward from one side of the basal wall, the side surface of the basal wall defines a can-shaped packaging area. The heat dissipation wall is located in the packaging area and has a bearing surface. The heat dissipation base further includes an extension wall extending outward from the other side of the basal wall, the basal wall, the heat dissipation wall, and the extension wall are integrated, and the extension wall includes a primary cooling surface for in contact with an external heat dissipation element. The present invention also provides a transistor outline packaged laser diode using the above-mentioned heat dissipation base.

A header, with improved cooling for electronic components for radio frequency signal transmission, for an electronic component for radio frequency data transfer, includes: a metallic base body including a plurality of electrical feedthroughs; a thermoelectric cooling element having one side bearing on the base body and an opposite side for mounting the electronic component; a radio frequency line to the electronic component being on the side for mounting the electronic component, with a ground conductor that is electrically connected to the metallic base body, the electrical connection to the metallic base body including a telluride element.

Provided is an optical module comprising a plate-like metal stem and a semiconductor optical modulation element mounted to a dielectric substrate provided on one side of the metal stem, wherein the metal stem has a metal stem penetration section in which a metal lead pin is inserted coaxially in a penetration hole which is formed in the metal stem and a dielectric member is provided to fill the penetration hole around the outer circumference of the lead pin, and a signal for modulation is supplied to the semiconductor optical modulation element connected in parallel with a terminal matching circuit, from the other side of the metal stem via the metal stem penetration section, wherein the terminal matching circuit is configured by a series connecting body which is comprised of a first resistor and a parallel body which is comprised of a second resistor and a capacitor.

A laser device comprises a hermetic housing that has an interior and is made at least in part of printed circuit board material, a laser element located in the interior, and at least one inorganic layer which hermetically shields the interior from the printed circuit board material.

A stem for a semiconductor package includes an eyelet having a through hole formed therethrough, a lead extending through the through hole, and a sealing part configured to seal the through hole around the lead, wherein a main material of the eyelet is 45% Ni—Fe, and wherein a thermal expansion coefficient of the eyelet is greater than a thermal expansion coefficient of the sealing part.

The first capacitor is opposed to and electrically connected to the first back electrode. The second capacitor is opposed to and electrically connected to the second back electrode. Each of the first circuit and the second circuit has a main region that overlaps with a corresponding one of the first capacitor and the second capacitor. At least one circuit of the first circuit and the second circuit has an extension region extending from the main region toward another circuit of the first circuit and the second circuit. At least one of one of the pair of first wires and the second wire is bonded to the extension region.

A header for a semiconductor package includes an eyelet having a first surface, a second surface opposite to the first surface, and a through hole penetrating the eyelet from the first surface to the second surface, and a metal block having a pedestal, and a columnar part protruding from the pedestal. The pedestal is inserted into the through hole, so that a portion of the columnar part protrudes from the first surface. The columnar part includes a device mounting surface on which a semiconductor device is mounted. An outer periphery of the pedestal is exposed around the columnar part in a plan view.

In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.